Properties of Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} epitaxial films grown by ultrahigh vacuum chemical vapor deposition
- and others
The authors have studied the deposition of Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} epitaxial films using ultrahigh vacuum chemical vapor deposition at temperatures from 475 to 600 C. The growth rate is found to decrease substantially with the addition of methylsilane. Incorporation of C, as measured by secondary ion mass spectroscopy (SIMS), is found to increase linearly with flow for low C concentration ({approximately}2%) but the dependence becomes sublinear at higher CH{sub 3}SiH{sub 3} flow rates. The substitutional incorporation of C, determined using X-ray diffraction is found to increase with decreasing temperature. For the films studied here the authors find substitutional incorporation up to 1.8% in Si{sub 1{minus}y}C{sub y} films. This is for a total incorporation of 2.5%, as measured by SIMS. Complete substitutional incorporation of C is obtained for up to 1.2%. For Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} films, it was found that the amount of substitutional C that can be incorporated decreases with increasing temperature. At 550 C the authors find a maximum of 0.7% C can be incorporated substitutionally, whereas at 475 C they are able to incorporate higher concentrations, similar to that for Si{sub 1{minus}y}C{sub y} layers. Morphology studies also indicate that lower growth temperatures are preferable in the growth of Si{sub 1{minus}y}C{sub y} films.
- Research Organization:
- Univ. of Texas, Austin, TX (US)
- OSTI ID:
- 20013042
- Journal Information:
- Journal of the Electrochemical Society, Vol. 146, Issue 12; Other Information: PBD: Dec 1999; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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