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Title: Circuit modeling of the emitter-wrap-through solar cell

Journal Article · · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)
DOI:https://doi.org/10.1109/16.791987· OSTI ID:20006069

Back-contact solar cells have the potential to reduce module assembly costs and give a higher conversion efficiency. Such a device must be simple to fabricate on an industrial scale and be tolerant of low minority-carrier diffusion lengths. The emitter-wrap-through (EWT) cell is a device design that can meet these goals. In this device, the diffused junction is present on both sides and is connected by laser-drilled holes through the silicon. EWT cells were frequently found to have poor fill factors (FF's) due to shunt-like behavior. The holes were found to possess no defects that adversely affect device performance. However, detailed equivalent circuit modeling of the EWT cell was able to explain the shunt-like behavior. Experiments were performed to confirm the physical mechanisms described by the equivalent circuit model. Device optimization guided by the equivalent circuit model has led to the demonstration of large area EWT cell with a FF of 77.6% and efficiency of 18.2%.

Research Organization:
Sandia National Lab., Albuquerque, NM (US)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
20006069
Journal Information:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 10; Other Information: PBD: Oct 1999; ISSN 0018-9383
Country of Publication:
United States
Language:
English

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