skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99

Abstract

Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited {approximately} 0.2 deg crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H- SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM approx. 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM approx. 4 meV).

Authors:
; ; ; ;
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (US)
OSTI Identifier:
20005944
Alternate Identifier(s):
OSTI ID: 20005944
Report Number(s):
ADA--368020/XAB
Contract N00014-98-1-0384; TRN: IM200006%%36
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; OPTICAL PROPERTIES; EPITAXY; CRYSTAL GROWTH; SILICON CARBIDES; SILICON; SUBSTRATES; CRYSTAL STRUCTURE

Citation Formats

Davis, R.F., Linthicum, K.J., Gehrke, T., Thomson, D., and Ronning, C. Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99. United States: N. p., 1999. Web.
Davis, R.F., Linthicum, K.J., Gehrke, T., Thomson, D., & Ronning, C. Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99. United States.
Davis, R.F., Linthicum, K.J., Gehrke, T., Thomson, D., and Ronning, C. Wed . "Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99". United States.
@article{osti_20005944,
title = {Large area lateral epitaxial overgrowth (LEO) of gallium nitride (GAN) thin films on silicon substrates and their characterization. Final report 1 March--30 September 99},
author = {Davis, R.F. and Linthicum, K.J. and Gehrke, T. and Thomson, D. and Ronning, C.},
abstractNote = {Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited {approximately} 0.2 deg crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H- SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM approx. 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM approx. 4 meV).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: