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Title: Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

Abstract

The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H{sub 2}/Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si {approx{underscore}equal} 1 to C/Si {gt} 1), at high carrier gas flow rates (large H{sub 2}/Si feed ratios), and at low operating pressures. Because relative C/Si and H{sub 2}/Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of {alpha}-SiC as well as {beta}-SiC. Experimental data reported on the growthmore » of {alpha}-SiC and {beta}-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species.« less

Authors:
;
Publication Date:
Research Org.:
Univ. of Illinois, Chicago, IL (US)
OSTI Identifier:
20003176
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 146; Journal Issue: 9; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MATHEMATICAL MODELS; SILICON CARBIDES; THERMODYNAMICS; VAPOR DEPOSITED COATINGS; CHEMICAL VAPOR DEPOSITION

Citation Formats

Richardson, C., and Takoudis, C.G. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system. United States: N. p., 1999. Web. doi:10.1149/1.1392466.
Richardson, C., & Takoudis, C.G. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system. United States. doi:10.1149/1.1392466.
Richardson, C., and Takoudis, C.G. Wed . "Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system". United States. doi:10.1149/1.1392466.
@article{osti_20003176,
title = {Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system},
author = {Richardson, C. and Takoudis, C.G.},
abstractNote = {The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H{sub 2}/Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si {approx{underscore}equal} 1 to C/Si {gt} 1), at high carrier gas flow rates (large H{sub 2}/Si feed ratios), and at low operating pressures. Because relative C/Si and H{sub 2}/Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of {alpha}-SiC as well as {beta}-SiC. Experimental data reported on the growth of {alpha}-SiC and {beta}-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species.},
doi = {10.1149/1.1392466},
journal = {Journal of the Electrochemical Society},
number = 9,
volume = 146,
place = {United States},
year = {1999},
month = {9}
}