Bias-voltage-controlled interlayer exchange coupling
The authors propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that the authors can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 20000667
- Journal Information:
- IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers), Vol. 35, Issue 5Pt1; Conference: 1999 international magnetics conference (Intermag '99), Kyongju (KR), 05/18/1999--05/21/1999; Other Information: PBD: Sep 1999; ISSN 0018-9464
- Country of Publication:
- United States
- Language:
- English
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