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Title: Bias-voltage-controlled interlayer exchange coupling

Abstract

The authors propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that the authors can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

Authors:
;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
USDOE
OSTI Identifier:
20000667
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 35; Journal Issue: 5Pt1; Conference: 1999 international magnetics conference (Intermag '99), Kyongju (KR), 05/18/1999--05/21/1999; Other Information: PBD: Sep 1999; Journal ID: ISSN 0018-9464
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ELECTRIC POTENTIAL; MAGNETIZATION; COMPOSITE MATERIALS; LAYERS; TUNNEL EFFECT; MAGNETORESISTANCE; ELECTRONIC EQUIPMENT; FERROMAGNETIC MATERIALS; ELECTRICAL INSULATORS

Citation Formats

You, C.Y., and Bader, S.D. Bias-voltage-controlled interlayer exchange coupling. United States: N. p., 1999. Web.
You, C.Y., & Bader, S.D. Bias-voltage-controlled interlayer exchange coupling. United States.
You, C.Y., and Bader, S.D. Wed . "Bias-voltage-controlled interlayer exchange coupling". United States.
@article{osti_20000667,
title = {Bias-voltage-controlled interlayer exchange coupling},
author = {You, C.Y. and Bader, S.D.},
abstractNote = {The authors propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that the authors can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.},
doi = {},
journal = {IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers)},
issn = {0018-9464},
number = 5Pt1,
volume = 35,
place = {United States},
year = {1999},
month = {9}
}