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Title: Bias dependent intergrain tunneling in lanthanum manganite thin films

Abstract

Bias dependent magnetoresistance of morphologically different La{sub 1{minus}x}Sr{sub x}MnO{sub 3} (LSMO) films, i.e., epitaxial and polycrystalline films, are investigated. I-V curves exhibit nonlinear behavior indicative of electron tunneling between neighboring grains. Furthermore, two clear minima are observed in the bias dependent magnetoresistance of the polycrystalline film on sapphire substrate in spite of no anomalous behavior in the epitaxial film. The minima appear at the voltages where the I-V curve deviates from the ohmic character. The bias dependent magnetoresistance also increases with increasing voltage. The novel aspects of the bias dependent magnetoresistance are discussed in connection with spin polarized tunneling.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Tokyo Inst. of Tech., Nagatsuta, Yokohama (JP)
OSTI Identifier:
20000658
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers)
Additional Journal Information:
Journal Volume: 35; Journal Issue: 5Pt1; Conference: 1999 international magnetics conference (Intermag '99), Kyongju (KR), 05/18/1999--05/21/1999; Other Information: PBD: Sep 1999; Journal ID: ISSN 0018-9464
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TUNNEL EFFECT; MANGANESE OXIDES; STRONTIUM OXIDES; LANTHANUM OXIDES; MAGNETORESISTANCE; THIN FILMS

Citation Formats

Nakano, K., Naoe, M., Yamasaki, M., Choi, K.K., Taniyama, T., and Yamazaki, Y. Bias dependent intergrain tunneling in lanthanum manganite thin films. United States: N. p., 1999. Web. doi:10.1109/20.801005.
Nakano, K., Naoe, M., Yamasaki, M., Choi, K.K., Taniyama, T., & Yamazaki, Y. Bias dependent intergrain tunneling in lanthanum manganite thin films. United States. doi:10.1109/20.801005.
Nakano, K., Naoe, M., Yamasaki, M., Choi, K.K., Taniyama, T., and Yamazaki, Y. Wed . "Bias dependent intergrain tunneling in lanthanum manganite thin films". United States. doi:10.1109/20.801005.
@article{osti_20000658,
title = {Bias dependent intergrain tunneling in lanthanum manganite thin films},
author = {Nakano, K. and Naoe, M. and Yamasaki, M. and Choi, K.K. and Taniyama, T. and Yamazaki, Y.},
abstractNote = {Bias dependent magnetoresistance of morphologically different La{sub 1{minus}x}Sr{sub x}MnO{sub 3} (LSMO) films, i.e., epitaxial and polycrystalline films, are investigated. I-V curves exhibit nonlinear behavior indicative of electron tunneling between neighboring grains. Furthermore, two clear minima are observed in the bias dependent magnetoresistance of the polycrystalline film on sapphire substrate in spite of no anomalous behavior in the epitaxial film. The minima appear at the voltages where the I-V curve deviates from the ohmic character. The bias dependent magnetoresistance also increases with increasing voltage. The novel aspects of the bias dependent magnetoresistance are discussed in connection with spin polarized tunneling.},
doi = {10.1109/20.801005},
journal = {IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers)},
issn = {0018-9464},
number = 5Pt1,
volume = 35,
place = {United States},
year = {1999},
month = {9}
}