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Title: Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]

Abstract

GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metal organic chemical vapor deposition. The flow-rate ratio of H{sub 2} on the upper stream to NH{sub 3} on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H{sub 2} flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H{sub 2}/NH{sub 3} flow ratio of 1.0, the authors can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emission in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm{sup 2}/V-s and concentration of 1 x 10{sup 18} cm{sup {minus}3} at 300 K.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Tsing Hua Univ., Hsinchu (TW)
OSTI Identifier:
20000470
Alternate Identifier(s):
OSTI ID: 20000470
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 28; Journal Issue: 10; Other Information: PBD: Oct 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICROSTRUCTURE; PHOTOLUMINESCENCE; ELECTRICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; THIN FILMS; ORGANOMETALLIC COMPOUNDS; HYDROGEN; AMMONIA; FLOW RATE

Citation Formats

Yang, C.C., Koh, P.L., Wu, M.C., Lee, C.H., and Chi, G.C. Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]. United States: N. p., 1999. Web. doi:10.1007/s11664-999-0244-2.
Yang, C.C., Koh, P.L., Wu, M.C., Lee, C.H., & Chi, G.C. Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]. United States. doi:10.1007/s11664-999-0244-2.
Yang, C.C., Koh, P.L., Wu, M.C., Lee, C.H., and Chi, G.C. Fri . "Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]". United States. doi:10.1007/s11664-999-0244-2.
@article{osti_20000470,
title = {Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]},
author = {Yang, C.C. and Koh, P.L. and Wu, M.C. and Lee, C.H. and Chi, G.C.},
abstractNote = {GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metal organic chemical vapor deposition. The flow-rate ratio of H{sub 2} on the upper stream to NH{sub 3} on the bottom stream is varied from 0.5 to 2. The growth condition and characterization of the GaN epitaxial layers are investigated in detail. The H{sub 2} flow rate of the upper stream strongly affects the reactant gas flow pattern near the substrate surface and thus influences the quality of epitaxial layers. At the optimum H{sub 2}/NH{sub 3} flow ratio of 1.0, the authors can obtain a good quality of GaN epitaxial layers which exhibit a strong near band-edge emission in the 20 K photoluminescence (PL), a full width at half maximum of 66 meV for the 300 K PL, an electron mobility of 266 cm{sup 2}/V-s and concentration of 1 x 10{sup 18} cm{sup {minus}3} at 300 K.},
doi = {10.1007/s11664-999-0244-2},
journal = {Journal of Electronic Materials},
number = 10,
volume = 28,
place = {United States},
year = {Fri Oct 01 00:00:00 EDT 1999},
month = {Fri Oct 01 00:00:00 EDT 1999}
}