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Title: AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact

Abstract

Freshly cleaved surfaces of various types of muscovite mica were irradiated with few electron high Z ions (e.g. Kr{sup 35+}, Xe{sup 44+}, Xe{sup 50+}, U{sup 70+} and Tb{sup 74+}), using the LLNL EBIT 2 facility, with velocities of ca. 2-3 keV/{mu} and fluences of ca. 10{sup 9} ions/cm{sup 2}. Atomic force microscopy of the surfaces revealed the formation of hillocklike defects associated with single ion impact. The defects are {approximately} 10-70 nm in diameter with heights of 0.1-3 nm. A linear increase of the defect volume with incident charge state has been determined, as well as a threshold incident charge state for defect formation. This threshold is found to depend in second order on the nature of the incident ion and the type of mica target. These results indicate that atomic displacement is caused by mutual electrostatic repulsion of target atoms, ionized through potential electron emission, due to the approaching highly charged ion. An extension of the studies to different insulating materials is underway.

Authors:
; ;  [1]
  1. Lawrence Livermore National Lab. CA (United States)
Publication Date:
OSTI Identifier:
199715
Report Number(s):
CONF-941129-
TRN: 95:005652-0207
Resource Type:
Conference
Resource Relation:
Conference: 13. international conference on the application of accelerators in research and industry, Denton, TX (United States), 7-10 Nov 1994; Other Information: PBD: 1994; Related Information: Is Part Of Thirteenth international conference on the application of accelerators in research and industry; Duggan, J.L.; Morgan, I.L. [eds.]; PB: 201 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICA; HEAVY ION REACTIONS; PHYSICAL RADIATION EFFECTS; DEFECTS; KRYPTON IONS; XENON IONS; URANIUM IONS; TERBIUM IONS

Citation Formats

Ruehlicke, C, Briere, M A, and Schneider, D. AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact. United States: N. p., 1994. Web.
Ruehlicke, C, Briere, M A, & Schneider, D. AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact. United States.
Ruehlicke, C, Briere, M A, and Schneider, D. Sat . "AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact". United States.
@article{osti_199715,
title = {AFM-studies of a new type of radiation induced defect on insulating surfaces caused by few electron high Z ion impact},
author = {Ruehlicke, C and Briere, M A and Schneider, D},
abstractNote = {Freshly cleaved surfaces of various types of muscovite mica were irradiated with few electron high Z ions (e.g. Kr{sup 35+}, Xe{sup 44+}, Xe{sup 50+}, U{sup 70+} and Tb{sup 74+}), using the LLNL EBIT 2 facility, with velocities of ca. 2-3 keV/{mu} and fluences of ca. 10{sup 9} ions/cm{sup 2}. Atomic force microscopy of the surfaces revealed the formation of hillocklike defects associated with single ion impact. The defects are {approximately} 10-70 nm in diameter with heights of 0.1-3 nm. A linear increase of the defect volume with incident charge state has been determined, as well as a threshold incident charge state for defect formation. This threshold is found to depend in second order on the nature of the incident ion and the type of mica target. These results indicate that atomic displacement is caused by mutual electrostatic repulsion of target atoms, ionized through potential electron emission, due to the approaching highly charged ion. An extension of the studies to different insulating materials is underway.},
doi = {},
url = {https://www.osti.gov/biblio/199715}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1994},
month = {12}
}

Conference:
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