We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.
Shang, Jing, et al. "The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe." Journal of Alloys and Compounds, vol. 960, May. 2023. https://doi.org/10.1016/j.jallcom.2023.170625
Shang, Jing, Murugesan, Magesh, Bigbee-Hansen, Samuel, Swain, Santosh K., Duenow, Joel N., Johnston, Steve, Beckman, Scott P., Walker, Harvey H., Antonio, Raine W., & McCloy, John S. (2023). The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe. Journal of Alloys and Compounds, 960. https://doi.org/10.1016/j.jallcom.2023.170625
Shang, Jing, Murugesan, Magesh, Bigbee-Hansen, Samuel, et al., "The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe," Journal of Alloys and Compounds 960 (2023), https://doi.org/10.1016/j.jallcom.2023.170625
@article{osti_1985629,
author = {Shang, Jing and Murugesan, Magesh and Bigbee-Hansen, Samuel and Swain, Santosh K. and Duenow, Joel N. and Johnston, Steve and Beckman, Scott P. and Walker, Harvey H. and Antonio, Raine W. and McCloy, John S.},
title = {The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe},
annote = {We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.},
doi = {10.1016/j.jallcom.2023.170625},
url = {https://www.osti.gov/biblio/1985629},
journal = {Journal of Alloys and Compounds},
volume = {960},
place = {United States},
year = {2023},
month = {05}}