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Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

Journal Article · · IEEE Transactions on Power Electronics
Not provided.
Research Organization:
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Organization:
USDOE
OSTI ID:
1982889
Journal Information:
IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 4 Vol. 37; ISSN 0885-8993
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (35)

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors journal July 2013
Impact of repetitive UIS on modern GaN power devices conference November 2016
Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT journal November 2020
Surge Energy Robustness of GaN Gate Injection Transistors conference April 2020
Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage journal March 2015
Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses conference June 2021
Avoiding Divergent Oscillation of a Cascode GaN Device Under High-Current Turn-Off Condition journal January 2017
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs journal September 2017
SiC power MOSFETs performance, robustness and technology maturity journal March 2016
Quantitative Model-Based False Turn-on Evaluation and Suppression for Cascode GaN Devices in Half-Bridge Applications journal October 2019
Hard-Switched Overvoltage Robustness of p-Gate GaN HEMTs at Increasing Temperatures conference October 2020
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs journal September 2017
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching journal April 2021
Evaluation of high voltage cascode GaN HEMTs in parallel operation conference March 2016
Reliability & Performance Related to Internal Avalanche of GaN Cascode Devices conference October 2018
An Industrial 650V GaN DHEMT Cascode Technology journal August 2014
The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs journal July 2010
Failure Mechanisms of Cascode GaN HEMTs Under Overvoltage and Surge Energy Events conference March 2021
Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN Devices journal January 2016
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs conference March 2018
On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices conference May 2015
Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors conference October 2020
OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs journal June 2021
Dynamic Breakdown Voltage of GaN Power HEMTs conference December 2020
Design and Simulation of GaN Superjunction Transistors With 2-DEG Channels and Fin Channels journal September 2019
Failure analysis of normally-off GaN HEMTs under avalanche conditions journal February 2020
A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-Conditions conference March 2019
Power P-GaN HEMT Under Single and Multi-Pulse UIS Conditions conference October 2018
Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage conference March 2021
Experimental Study on the Short-Circuit Instability of Cascode GaN HEMTs journal April 2020
Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs journal December 2020
Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration journal May 2014
Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact journal September 2018
Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs journal June 2020
Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT journal April 2014

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