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Enhancement Mode β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency

Journal Article · · IEEE Electron Device Letters
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Not provided.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0012704
OSTI ID:
1982874
Journal Information:
IEEE Electron Device Letters, Vol. 42, Issue 10; ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (24)

Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors July 2018
$\beta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz July 2019
Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors December 2020
Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures September 2020
Modulation-doped β-(Al 0.2 Ga 0.8 ) 2 O 3 /Ga 2 O 3 field-effect transistor July 2017
Growth and characterization of metalorganic vapor-phase epitaxy-grown β -(Al x Ga 1− x ) 2 O 3 / β -Ga 2 O 3 heterostructure channels January 2021
High electron density β -(Al 0.17 Ga 0.83 ) 2 O 3 /Ga 2 O 3 modulation doping using an ultra-thin (1 nm) spacer layer June 2020
Demonstration of β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 double heterostructure field effect transistors June 2018
Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors March 2019
Demonstration of high mobility and quantum transport in modulation-doped β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 heterostructures April 2018
Toward high voltage radio frequency devices in β-Ga2O3 December 2020
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy February 2012
Czochralski growth and characterization of β-Ga2O3 single crystals August 2010
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2 April 2020
Bias dependence of the MODFET intrinsic model elements values at microwave frequencies January 1989
Ab initio velocity-field curves in monoclinic β-Ga 2 O 3 July 2017
Semiconductors for high‐voltage, vertical channel field‐effect transistors March 1982
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation June 2017
Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3 October 1965
β-(Al 0.18 Ga 0.82 ) 2 O 3 /Ga 2 O 3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm June 2021
Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts April 2018
Structural, band and electrical characterization of β-(Al 0.19 Ga 0.81 ) 2 O 3 films grown by molecular beam epitaxy on Sn doped β-Ga 2 O 3 substrate September 2019
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates October 2019
130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts June 2021

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