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Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Journal Article · · ACS Applied Materials and Interfaces
 [1];  [2];  [3];  [1];  [2];  [4];  [1];  [1];  [5];  [1];  [1];  [1];  [1];  [6];  [7];  [8];  [4];  [2];  [9]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  2. Department of Chemistry and BioChemistry, University of California, San Diego, La Jolla, California 92093, United States
  3. Department of Chemistry and BioChemistry, University of California, San Diego, La Jolla, California 92093, United States; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  5. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
  6. Department of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
  7. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles 90089, United States
  8. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  9. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Not provided.
Research Organization:
SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1981999
Journal Information:
ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 38 Vol. 14; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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Ferroelectric Hafnium Oxide A Game Changer to FRAM? conference October 2014
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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond conference December 2017
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Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy journal November 2003
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs conference December 2016

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