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Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Journal Article · · ACS Applied Materials and Interfaces
 [1];  [2];  [3];  [1];  [2];  [4];  [1];  [1];  [5];  [1];  [1];  [1];  [1];  [6];  [7];  [8];  [4];  [2];  [9]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  2. Department of Chemistry and BioChemistry, University of California, San Diego, La Jolla, California 92093, United States
  3. Department of Chemistry and BioChemistry, University of California, San Diego, La Jolla, California 92093, United States; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  4. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  5. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
  6. Department of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
  7. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles 90089, United States
  8. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  9. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Not provided.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1981999
Journal Information:
ACS Applied Materials and Interfaces, Vol. 14, Issue 38; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

References (32)

Phase transitions in ferroelectric silicon doped hafnium oxide journal September 2011
Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors conference December 2011
The Past, the Present, and the Future of Ferroelectric Memories journal April 2020
Negative Capacitance Transistors journal January 2019
The future of ferroelectric field-effect transistor technology journal October 2020
Ferroelectric HfO2-based synaptic devices: recent trends and prospects journal September 2021
Why is nonvolatile ferroelectric memory field-effect transistor still elusive? journal July 2002
Ferroelectric Hafnium Oxide A Game Changer to FRAM? conference October 2014
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs conference December 2016
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond conference December 2017
A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology journal January 2018
The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design journal August 2021
HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications conference December 2020
Logic Compatible High-Performance Ferroelectric Transistor Memory journal March 2022
Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance journal June 2018
Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging? journal March 2012
Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling journal January 2011
Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging journal August 2018
Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer journal September 2004
Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition journal January 2019
Dynamic leakage current compensation in ferroelectric thin-film capacitor structures journal April 2005
Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices journal January 2021
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Generalized Gradient Approximation Made Simple journal October 1996
Special points for Brillouin-zone integrations journal June 1976
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles journal July 2021
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing journal September 2021
Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium journal May 2020
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors journal April 2022
Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy journal November 2003