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Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides

Journal Article · · ACS Applied Materials and Interfaces
 [1];  [2];  [1];  [1];  [2];  [1];  [3];  [3];  [4];  [1]
  1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
  2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
  3. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  4. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; International Institute for Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States; Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States
Not provided.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1981996
Journal Information:
ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 20 Vol. 14; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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