Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides

Stanev, Teodor K.; Liu, Pufan; Zeng, Hongfei; Lenferink, Erik J.; Murthy, Akshay A.; Speiser, Nathaniel; Watanabe, Kenji; Taniguchi, Takashi; Dravid, Vinayak P.; Stern, Nathaniel P.

doi:10.1021/acsami.2c03652

Title: Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides

Journal Article · 11 May 2022 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.2c03652· OSTI ID:1981996

Stanev, Teodor K. ^[1]; Liu, Pufan ^[2]; Zeng, Hongfei ^[1]; Lenferink, Erik J. ^[1];

^[2]; Speiser, Nathaniel ^[1];

^[3];

^[4];

^[1]

Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; International Institute for Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States; Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

OSTI ID:: 1981996

Journal Information:: ACS Applied Materials and Interfaces, Vol. 14, Issue 20; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

References (64)

Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers Ajayi, Obafunso A.; Ardelean, Jenny V.; Shepard, Gabriella D. 2D Materials, Vol. 4, Issue 3 https://doi.org/10.1088/2053-1583/aa6aa1	journal	July 2017
Highly Stable, Dual-Gated MoS ₂ Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck ACS Nano, Vol. 9, Issue 7 https://doi.org/10.1021/acsnano.5b01341	journal	June 2015
High Mobility MoS ₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer Wang, Jingli; Yao, Qian; Huang, Chun-Wei Advanced Materials, Vol. 28, Issue 37 https://doi.org/10.1002/adma.201602757	journal	July 2016
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7242	journal	February 2015
Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction Ross, Jason S.; Rivera, Pasqual; Schaibley, John Nano Letters, Vol. 17, Issue 2 https://doi.org/10.1021/acs.nanolett.6b03398	journal	January 2017
Evidence for moiré excitons in van der Waals heterostructures Tran, Kha; Moody, Galan; Wu, Fengcheng Nature, Vol. 567, Issue 7746 https://doi.org/10.1038/s41586-019-0975-z	journal	February 2019
Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals Kretinin, A. V.; Cao, Y.; Tu, J. S. Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl5006542	journal	May 2014
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems Ferrari, Andrea C.; Bonaccorso, Francesco; Fal'ko, Vladimir Nanoscale, Vol. 7, Issue 11 https://doi.org/10.1039/C4NR01600A	journal	January 2015
Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-Layer MoS ₂ Han, Xu; Lin, Jiangxiazi; Liu, Junwei The Journal of Physical Chemistry C, Vol. 123, Issue 23 https://doi.org/10.1021/acs.jpcc.9b02549	journal	May 2019
Electric-field-induced widely tunable direct and indirect band gaps in hBN/MoS₂ van der Waals heterostructures Li, Quan; Xu, Liang; Luo, Kai-Wu Journal of Materials Chemistry C, Vol. 5, Issue 18 https://doi.org/10.1039/C7TC00562H	journal	January 2017
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS ₂ flake based field effect transistors on SiO ₂ and hBN substrates Lee, Changhee; Rathi, Servin; Khan, Muhammad Atif Nanotechnology, Vol. 29, Issue 33 https://doi.org/10.1088/1361-6528/aac6b0	journal	June 2018
Indirect excitons in van der Waals heterostructures at room temperature Calman, E. V.; Fogler, M. M.; Butov, L. V. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-04293-7	journal	May 2018
Electronic and optical properties of heterostructures based on transition metal dichalcogenides and graphene-like zinc oxide Wang, Sake; Tian, Hongyu; Ren, Chongdan Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-30614-3	journal	August 2018
Heterostructures based on two-dimensional layered materials and their potential applications Li, Ming-Yang; Chen, Chang-Hsiao; Shi, Yumeng Materials Today, Vol. 19, Issue 6 https://doi.org/10.1016/j.mattod.2015.11.003	journal	July 2016
Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure Choi, Woosuk; Akhtar, Imtisal; Rehman, Malik Abdul ACS Applied Materials & Interfaces, Vol. 11, Issue 2 https://doi.org/10.1021/acsami.8b15817	journal	December 2018
Two-dimensional heterostructures: fabrication, characterization, and application Wang, Hong; Liu, Fucai; Fu, Wei Nanoscale, Vol. 6, Issue 21 https://doi.org/10.1039/C4NR03435J	journal	January 2014
Low-Temperature Ohmic Contact to Monolayer MoS ₂ by van der Waals Bonded Co/ h -BN Electrodes Cui, Xu; Shih, En-Min; Jauregui, Luis A. Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b01536	journal	July 2017
Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts Murthy, Akshay A.; Stanev, Teodor K.; Cain, Jeffrey D. Nano Letters, Vol. 18, Issue 5 https://doi.org/10.1021/acs.nanolett.8b00444	journal	April 2018
Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure Wang, Ke; Taniguchi, Takashi; Watanabe, Kenji arXiv https://doi.org/10.48550/arXiv.1610.02929	preprint	January 2016
Moiré Intralayer Excitons in a MoSe ₂ /MoS ₂ Heterostructure Zhang, Nan; Surrente, Alessandro; Baranowski, Michał Nano Letters, Vol. 18, Issue 12 https://doi.org/10.1021/acs.nanolett.8b03266	journal	November 2018
Excitonic quantum confinement modified optical conductivity of monolayer and few-layered MoS₂ Jia, Guang Yi; Liu, Yue; Gong, Jing Yu Journal of Materials Chemistry C, Vol. 4, Issue 37 https://doi.org/10.1039/C6TC02502A	journal	January 2016
Electrochemical synthesis of luminescent MoS ₂ quantum dots Gopalakrishnan, Deepesh; Damien, Dijo; Li, Bo Chemical Communications, Vol. 51, Issue 29 https://doi.org/10.1039/C4CC09826A	journal	January 2015
Synthesis of MoS₂ Quantum Dots Uniformly Dispersed on Low Dimensional MoS₂ Nanosheets and Unravelling its Multiple Emissive States Pallikkarathodi Mani, Neema; Ganiga, Manjunatha; Cyriac, Jobin ChemistrySelect, Vol. 2, Issue 21 https://doi.org/10.1002/slct.201700937	journal	July 2017
Direct, large area growth of few-layered MoS ₂ nanostructures on various flexible substrates: growth kinetics and its effect on photodetection studies Sahatiya, Parikshit; Jones, S. Solomon; Badhulika, Sushmee Flexible and Printed Electronics, Vol. 3, Issue 1 https://doi.org/10.1088/2058-8585/aaa4a5	journal	January 2018
Size-Dependent Properties of Two-Dimensional MoS₂ and WS₂ Nguyen, Thang Phan; Sohn, Woonbae; Oh, Jeong Hyeon The Journal of Physical Chemistry C, Vol. 120, Issue 18 https://doi.org/10.1021/acs.jpcc.6b01838	journal	May 2016
Quantum confinement effects across two-dimensional planes in MoS ₂ quantum dots Gan, Z. X.; Liu, L. Z.; Wu, H. Y. Applied Physics Letters, Vol. 106, Issue 23 https://doi.org/10.1063/1.4922551	journal	June 2015
Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep29016	journal	June 2016
Thickness sorting of two-dimensional transition metal dichalcogenides via copolymer-assisted density gradient ultracentrifugation Kang, Joohoon; Seo, Jung-Woo T.; Alducin, Diego Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6478	journal	November 2014
Nanopatterning and Electrical Tuning of MoS ₂ Layers with a Subnanometer Helium Ion Beam Fox, Daniel S.; Zhou, Yangbo; Maguire, Pierce Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b01673	journal	July 2015
Tungsten Diselenide Patterning and Nanoribbon Formation by Gas-Assisted Focused-Helium-Ion-Beam-Induced Etching Stanford, Michael G.; Pudasaini, Pushpa R.; Cross, Nicholas Small Methods, Vol. 1, Issue 4 https://doi.org/10.1002/smtd.201600060	journal	February 2017
Maskless Micro/Nanopatterning and Bipolar Electrical Rectification of MoS₂ Flakes Through Femtosecond Laser Direct Writing Zuo, Pei; Jiang, Lan; Li, Xin ACS Applied Materials & Interfaces, Vol. 11, Issue 42 https://doi.org/10.1021/acsami.9b13059	journal	September 2019
Luminescent MoS2 quantum dots with reverse saturable absorption prepared by pulsed laser ablation Sunitha, A. P.; Hajara, P.; Shaji, Manu Journal of Luminescence, Vol. 203 https://doi.org/10.1016/j.jlumin.2018.06.004	journal	November 2018
Size-tunable Lateral Confinement in Monolayer Semiconductors Wei, Guohua; Czaplewski, David A.; Lenferink, Erik J. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-03594-z	journal	June 2017
A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe ₂ Song, Xiang-Xiang; Liu, Di; Mosallanejad, Vahid Nanoscale, Vol. 7, Issue 40 https://doi.org/10.1039/C5NR04961J	journal	January 2015
High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results Manouras, Theodore; Argitis, Panagiotis Nanomaterials, Vol. 10, Issue 8 https://doi.org/10.3390/nano10081593	journal	August 2020
Control of Radiation Damage in MoS ₂ by Graphene Encapsulation Zan, Recep; Ramasse, Quentin M.; Jalil, Rashid ACS Nano, Vol. 7, Issue 11 https://doi.org/10.1021/nn4044035	journal	October 2013
Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping Komsa, Hannu-Pekka; Kotakoski, Jani; Kurasch, Simon Physical Review Letters, Vol. 109, Issue 3 https://doi.org/10.1103/PhysRevLett.109.035503	journal	July 2012
The pristine atomic structure of MoS ₂ monolayer protected from electron radiation damage by graphene Algara-Siller, Gerardo; Kurasch, Simon; Sedighi, Mona Applied Physics Letters, Vol. 103, Issue 20 https://doi.org/10.1063/1.4830036	journal	November 2013
Electron radiation damage mechanisms in 2D MoSe ₂ Lehnert, T.; Lehtinen, O.; Algara–Siller, G. Applied Physics Letters, Vol. 110, Issue 3 https://doi.org/10.1063/1.4973809	journal	January 2017
Raman Spectroscopy, Photocatalytic Degradation, and Stabilization of Atomically Thin Chromium Tri-iodide Shcherbakov, Dmitry; Stepanov, Petr; Weber, Daniel Nano Letters, Vol. 18, Issue 7 https://doi.org/10.1021/acs.nanolett.8b01131	journal	June 2018
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep20890	journal	February 2016
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping Castellanos-Gomez, Andres; Buscema, Michele; Molenaar, Rianda 2D Materials, Vol. 1, Issue 1 https://doi.org/10.1088/2053-1583/1/1/011002	journal	April 2014
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides Selig, Malte; Berghäuser, Gunnar; Raja, Archana Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13279	journal	November 2016
Strain-Dependent Edge Structures in MoS ₂ Layers Tinoco, Miguel; Maduro, Luigi; Masaki, Mukai Nano Letters, Vol. 17, Issue 11 https://doi.org/10.1021/acs.nanolett.7b03627	journal	October 2017
Direct Imaging of Band Profile in Single Layer MoS ₂ on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl501133c	journal	April 2014
Uncovering edge states and electrical inhomogeneity in MoS ₂ field-effect transistors Wu, Di; Li, Xiao; Luan, Lan Proceedings of the National Academy of Sciences, Vol. 113, Issue 31 https://doi.org/10.1073/pnas.1605982113	journal	July 2016
Inhomogeneous band bending on MoS ₂ (0001) arising from surface steps and dislocations Mahatha, S. K.; Menon, Krishnakumar S. R. Journal of Physics: Condensed Matter, Vol. 24, Issue 30 https://doi.org/10.1088/0953-8984/24/30/305502	journal	July 2012
Second harmonic generation in $h$ -BN and MoS $_{2}$ monolayers: Role of electron-hole interaction Grüning, M.; Attaccalite, C. Physical Review B, Vol. 89, Issue 8 https://doi.org/10.1103/PhysRevB.89.081102	journal	February 2014
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides Moody, Galan; Kavir Dass, Chandriker; Hao, Kai Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9315	journal	September 2015
Nanoscale Heterogeneities in Monolayer MoSe ₂ Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy Smithe, Kirby K. H.; Krayev, Andrey V.; Bailey, Connor S. ACS Applied Nano Materials, Vol. 1, Issue 2 https://doi.org/10.1021/acsanm.7b00083	journal	January 2018
Strain engineering in monolayer WS ₂ , MoS ₂ , and the WS ₂ /MoS ₂ heterostructure He, Xin; Li, Hai; Zhu, Zhiyong Applied Physics Letters, Vol. 109, Issue 17 https://doi.org/10.1063/1.4966218	journal	October 2016
Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures Vincent, Tom; Panchal, Vishal; Booth, Tim 2D Materials, Vol. 6, Issue 1 https://doi.org/10.1088/2053-1583/aaf1dc	journal	December 2018
Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides Murthy, Akshay A.; Stanev, Teodor K.; dos Reis, Roberto ACS Nano, Vol. 14, Issue 2 https://doi.org/10.1021/acsnano.9b06581	journal	January 2020
Quantum transport through MoS ₂ constrictions defined by photodoping Epping, Alexander; Banszerus, Luca; Güttinger, Johannes Journal of Physics: Condensed Matter, Vol. 30, Issue 20 https://doi.org/10.1088/1361-648X/aabbb8	journal	April 2018
Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS₂ van der Waals Heterostructures Pisoni, Riccardo; Lee, Yongjin; Overweg, Hiske Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b02186	journal	July 2017
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging Garcia, Alejandra; Raya, Andres M.; Mariscal, Marcelo M. Ultramicroscopy, Vol. 146 https://doi.org/10.1016/j.ultramic.2014.05.004	journal	November 2014
Quantized conductance of a suspended graphene nanoconstriction Tombros, Nikolaos; Veligura, Alina; Junesch, Juliane Nature Physics, Vol. 7, Issue 9 https://doi.org/10.1038/nphys2009	journal	June 2011
Quantized conductance of point contacts in a two-dimensional electron gas van Wees, B. J.; van Houten, H.; Beenakker, C. W. J. Physical Review Letters, Vol. 60, Issue 9 https://doi.org/10.1103/PhysRevLett.60.848	journal	February 1988
Quantized Conductance in an InSb Nanowire van Weperen, Ilse; Plissard, Sébastien R.; Bakkers, Erik P. A. M. Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl3035256	journal	December 2012
Dielectric Screening of Excitons and Trions in Single-Layer MoS ₂ Lin, Yuxuan; Ling, Xi; Yu, Lili Nano Letters, Vol. 14, Issue 10 https://doi.org/10.1021/nl501988y	journal	September 2014
Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors Sui, Yang; Appenzeller, Joerg Nano Letters, Vol. 9, Issue 8 https://doi.org/10.1021/nl901396g	journal	August 2009
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Two-dimensional MoS2: Properties, preparation, and applications Li, Xiao; Zhu, Hongwei Journal of Materiomics, Vol. 1, Issue 1 https://doi.org/10.1016/j.jmat.2015.03.003	journal	March 2015

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