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Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO 2

Journal Article · · ACS Applied Materials and Interfaces
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  1. Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  4. Institute of Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, Georgia 30318, United States
  5. Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
  6. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
  7. NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany
  8. TEL Technology Center, America, LLC, Albany, New York 12203, United States
  9. G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  10. Department of Mechanical & Aerospace Engineering, University of California, La Jolla, San Diego, California 92093, United States
  11. Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States
  12. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
  13. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
+ Show Author Affiliations

Not provided.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
1981994
Journal Information:
ACS Applied Materials and Interfaces, Vol. 14, Issue 32; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer journal January 2021
Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers journal November 2019
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2 journal January 2018
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO 2 Thin Films journal July 2016
Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide journal January 2021
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO 2 films by transmission-EBSD journal November 2019
Ferroelectricity emerging in strained (111)-textured ZrO 2 thin films journal January 2016
Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0.5Zr0.5O2 thin film ferroelectric capacitors journal August 2021
The effects of crystallographic orientation and strain of thin Hf 0.5 Zr 0.5 O 2 film on its ferroelectricity journal February 2014
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Domain Matching Epitaxial Growth of In 2 O 3 Thin Films on α-Al 2 O 3 (0001) journal January 2012
Domain matching epitaxy of BaBiO3 on SrTiO3 with structurally modified interface journal April 2018
Domain-Matching Epitaxy of Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) on La 2/3 Sr 1/3 MnO 3 (001) journal April 2020
Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering journal October 2020
Precession electron diffraction – a topical review journal January 2015
Automated Crystal Orientation Mapping by Precession Electron Diffraction-Assisted Four-Dimensional Scanning Transmission Electron Microscopy Using a Scintillator-Based CMOS Detector journal August 2021
Stabilizing the ferroelectric phase in doped hafnium oxide journal August 2015
The origin of ferroelectricity in Hf 1−x Zr x O 2 : A computational investigation and a surface energy model journal April 2015
Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films journal August 2020
Crystallization in hafnia- and zirconia-based systems journal August 2004
Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices journal January 2021
Structures and the oxygen deficiency of tetragonal and monoclinic zirconium oxide nanoparticles journal January 2006
Hafnia and hafnia-toughened ceramics journal January 1992
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Generalized Gradient Approximation Made Simple journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Special points for Brillouin-zone integrations journal June 1976

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