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Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics

Journal Article · · ACS Applied Materials and Interfaces
 [1];  [2];  [1];  [3];  [2];  [1];  [1];  [3];  [4];  [5];  [1]
  1. Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
  2. Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
  3. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
  4. Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
  5. Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States

Not provided.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Argonne Leadership Computing Facility (ALCF)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1981983
Journal Information:
ACS Applied Materials and Interfaces, Vol. 13, Issue 50; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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