Crystallization Behavior of Zinc-Doped Nb2O5 Thin Films Synthesized by Atomic Layer Deposition

Kozen, Alexander C.; Woodward, Jeffrey M.; Ruppalt, Laura B.; Cho, Hans; Ventrice, Carl A.; Rowley, Andrew H.; Zhe, Nicole; Mesiti, Alex; Sargent, Emma; Michels, James H.; Robinson, Zachary R.

doi:10.1021/acsaelm.2c00446

Crystallization Behavior of Zinc-Doped Nb₂O₅ Thin Films Synthesized by Atomic Layer Deposition

Journal Article · 11 August 2022 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.2c00446· OSTI ID:1981967

Kozen, Alexander C. ^[1]; Woodward, Jeffrey M. ^[2]; Ruppalt, Laura B. ^[2]; Cho, Hans ^[2]; Ventrice, Carl A. ^[3]; Rowley, Andrew H. ^[4]; Zhe, Nicole ^[4]; Mesiti, Alex ^[4]; Sargent, Emma ^[4]; Michels, James H. ^[4]; ^[4]

Department of Materials Science & Engineering, University of Maryland, College Park, Maryland 20742, United States
U.S. Naval Research Laboratory, Washington, DC 20375, United States
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, United States
Department of Physics, SUNY Brockport, Brockport, New York 14420, United States

Not provided.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0012704;

OSTI ID:: 1981967

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 9 Vol. 4; ISSN 2637-6113

Publisher:: ACS Publications

Country of Publication:: United States

Language:: English

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