Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers
- Electrical and Computer Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, United States
- Electrical and Computer Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, United States; Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, United States
- Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, United States
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
Not provided.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1981956
- Journal Information:
- Nano Letters, Vol. 21, Issue 19; ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Inhibited nonradiative decay at all exciton densities in monolayer semiconductors
Manipulation of Exciton Dynamics in Single-Layer WSe2 Using a Toroidal Dielectric Metasurface
Journal Article
·
2021
· Science
·
OSTI ID:1809904
+2 more
Manipulation of Exciton Dynamics in Single-Layer WSe2 Using a Toroidal Dielectric Metasurface
Journal Article
·
2021
· Nano Letters
·
OSTI ID:1835808
+9 more