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Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers

Journal Article · · Nano Letters
 [1];  [2];  [1];  [1];  [3];  [1];  [4];  [5];  [6];  [2]
  1. Electrical and Computer Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, United States
  2. Electrical and Computer Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, United States; Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, United States
  3. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, United States
  4. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  5. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
  6. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States

Not provided.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
OSTI ID:
1981956
Journal Information:
Nano Letters, Vol. 21, Issue 19; ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

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