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Scale-Dependent Optimized Homoepitaxy of InAs(111)A

Journal Article · · Crystal Growth and Design
 [1];  [1];  [2];  [3];  [1];  [1]
  1. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
  2. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
  3. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States; Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States; Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

Not provided.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
OSTI ID:
1981820
Journal Information:
Crystal Growth and Design, Vol. 22, Issue 10; ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

References (32)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
  • Yerino, Christopher D.; Liang, Baolai; Huffaker, Diana L.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 35, Issue 1 https://doi.org/10.1116/1.4972049
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Molecular beam epitaxial growth of Bi 2 Te 3 and Sb 2 Te 3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction journal July 2013
Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction journal April 2021
Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A journal March 2021
High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport journal October 2018
InAs(111)A homoepitaxy with molecular beam epitaxy journal November 2019
Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures journal May 2009
Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures journal December 2019
Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis journal April 2000
Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films? journal December 1997
Atomic hydrogen cleaning of GaAs(): a scanning tunnelling microscopy study journal January 2004
Controlled oxide removal for the preparation of damage-free InAs(110) surfaces journal September 2000
Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements journal July 1985
Atomic Structure of the GaAs ( 001 ) − ( 2 × 4 ) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory journal October 1999
Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface journal September 2013
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
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Generalized Gradient Approximation Made Simple journal October 1996
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study journal January 1998
Machine learning the Hubbard U parameter in DFT+U using Bayesian optimization journal November 2020
First-principles feasibility assessment of a topological insulator at the InAs/GaSb interface journal August 2021
Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration journal June 2021
Calculation of the magnetic anisotropy with projected-augmented-wave methodology and the case study of disordered Fe 1 − x Co x alloys journal June 2016
Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111) journal December 1992
Theory of the scanning tunneling microscope journal January 1985
Best practices for first-principles simulations of epitaxial inorganic interfaces journal April 2022
Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction journal March 1985
Mechanism of Electron Accumulation Layer Formation at the MBE-grown InAs(111)A Surface journal January 2008
Stable reconstruction and adsorbates of InAs(111)A surface journal May 2006
Ultra-high-quality two-dimensional electron systems journal February 2021

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