A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors

Nunn, William; Truttmann, Tristan K.; Jalan, Bharat

doi:10.1557/s43578-021-00377-1

A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors

Journal Article · 21 September 2021 · Journal of Materials Research

DOI:https://doi.org/10.1557/s43578-021-00377-1· OSTI ID:1981012

Nunn, William; Truttmann, Tristan K.;

Not provided.

Research Organization:: Univ. of Minnesota, Minneapolis, MN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0016371

OSTI ID:: 1981012

Journal Information:: Journal of Materials Research, Vol. 36, Issue 23; ISSN 0884-2914

Publisher:: Springer Nature

Country of Publication:: United States

Language:: English

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