Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Amiri, Seyed Ebrahim Hashemi; Turkdogan, Sunay; Ranga, Praneeth; Fan, Fan; Gan, Lin; Ning, Cun-Zheng

doi:10.1140/epjs/s11734-021-00388-3

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Journal Article · 03 January 2022 · European Physical Journal. Special Topics

DOI:https://doi.org/10.1140/epjs/s11734-021-00388-3· OSTI ID:1980818

Amiri, Seyed Ebrahim Hashemi; Turkdogan, Sunay; Ranga, Praneeth; Fan, Fan; Gan, Lin;

Not provided.

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0000625

OSTI ID:: 1980818

Journal Information:: European Physical Journal. Special Topics, Vol. 231, Issue 4; ISSN 1951-6355

Publisher:: Springer

Country of Publication:: United States

Language:: English

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