Common-Source Inductance Induced Voltage Overshoot and Oscillation in Active Bidirectional Devices

Fan, Boran; Baker, Victoria; Burgos, Rolando; Chamie, Mahmoud El; Chen, Warren; Blasko, Vladimir; Boroyevich, Dushan

doi:10.1109/tpel.2021.3080615

Common-Source Inductance Induced Voltage Overshoot and Oscillation in Active Bidirectional Devices

Journal Article · 01 December 2021 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2021.3080615· OSTI ID:1980540

^[1]; Baker, Victoria ^[1]; ^[1]; Chamie, Mahmoud El ^[2]; Chen, Warren ^[2]; Blasko, Vladimir ^[2]; ^[1]

Center for Power Electronics Systems, the Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA
Raytheon Technologies Research Center, Hartford, CT, USA

Not provided.

Research Organization:: Raytheon Technologies Corp., Waltham, MA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0000891

OSTI ID:: 1980540

Journal Information:: IEEE Transactions on Power Electronics, Vol. 36, Issue 12; ISSN 0885-8993

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (9)

Optimization of the balance between the gate-drain capacitance and the common source inductance for preventing the oscillatory false triggering of fast switching GaN-FETs Matsumoto, Rynosuke; Umetani, Kazuhiro; Hiraki, Eiji 2017 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ECCE.2017.8095811	conference	October 2017
Common source inductance introduced self-turn-on in MOSFET turn-off transient Zhang, Wen; Zhang, Zheyu; Wang, Fred 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2017.7930793	conference	March 2017
Matrix converters: a technology review Wheeler, P. W.; Rodriguez, J.; Clare, J. C. IEEE Transactions on Industrial Electronics, Vol. 49, Issue 2 https://doi.org/10.1109/41.993260	journal	April 2002
Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration Zhang, Zheyu; Wang, Fred; Tolbert, Leon M. IEEE Transactions on Power Electronics, Vol. 29, Issue 4 https://doi.org/10.1109/TPEL.2013.2268058	journal	April 2014
Stability Considerations for Silicon Carbide Field-Effect Transistors Lemmon, Andrew; Mazzola, Michael; Gafford, James IEEE Transactions on Power Electronics, Vol. 28, Issue 10 https://doi.org/10.1109/TPEL.2012.2226473	journal	October 2013
Operation and Control of a Matrix Converter in Current Control Mode with Voltage Boost Capability Blasko, Vladimir; Fan, Boran; Chamie, Mahmoud El 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC39645.2020.9124243	conference	March 2020
A new gate drive technique for superjunction MOSFETs to compensate the effects of common source inductance Zojer, Bernhard 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC.2018.8341408	conference	March 2018
Model Predictive Control of Step-up Matrix Converters Blasko, Vladimir; El Chamie, Mahmoud; Fan, Boran 2020 IEEE Energy Conversion Congress and Exposition (ECCE) https://doi.org/10.1109/ECCE44975.2020.9236078	conference	October 2020
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics Chen, Zheng; Boroyevich, Dushan; Burgos, Rolando The 2010 International Power Electronics Conference - ECCE ASIA - https://doi.org/10.1109/IPEC.2010.5543851	conference	June 2010

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