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Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [1];  [1];  [1];  [1]
  1. Department of Electrical Engineering, University of South Carolina (UofSC), Columbia, SC, USA
+ Show Author Affiliations

Not provided.

Research Organization:
Univ. of South Carolina, Columbia, SC (United States)
Sponsoring Organization:
USDOE Office of Nuclear Energy (NE)
DOE Contract Number:
NE0008662
OSTI ID:
1980536
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 69, Issue 8; ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (39)

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