Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250- μ m-Thick 4H-SiC Epitaxial Layers

Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, Omerfaruk; Nag, Ritwik; Watson, Daniel L.  P.; McGregor, Douglas S.; Mandal, Krishna C.

doi:10.1109/tns.2022.3168789

Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250- μ m-Thick 4H-SiC Epitaxial Layers

Journal Article · 01 August 2022 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2022.3168789· OSTI ID:1980535

Kleppinger, Joshua W. ^[1]; ^[2]; ^[2]; Nag, Ritwik ^[2]; Watson, Daniel L. P. ^[3]; McGregor, Douglas S. ^[3]; ^[2]

Department of Electrical Engineering, University of South Carolina (UofSC), Columbia, SC, USA; OSTI
Department of Electrical Engineering, University of South Carolina (UofSC), Columbia, SC, USA
Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, USA

Not provided.

Research Organization:: Univ. of South Carolina, Columbia, SC (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

DOE Contract Number:: NE0008662

OSTI ID:: 1980535

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 8 Vol. 69; ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (46)

Gamma-Ray Spectroscopy Dunn, William L.; McGregor, Douglas S.; Shultis, J. Kenneth Handbook of Particle Detection and Imaging https://doi.org/10.1007/978-3-319-93785-4_17	book	January 2021
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk Journal of Applied Physics, Vol. 129, Issue 24 https://doi.org/10.1063/5.0049218	journal	June 2021
4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review Capan, Ivana Electronics, Vol. 11, Issue 4 https://doi.org/10.3390/electronics11040532	journal	February 2022
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study Capan, Ivana; Brodar, Tomislav; Pastuović, Željko Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5011124	journal	April 2018
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices Mandal, Krishna C.; Kleppinger, Joshua W.; Chaudhuri, Sandeep K. Micromachines, Vol. 11, Issue 3 https://doi.org/10.3390/mi11030254	journal	February 2020
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C. Applied Physics Letters, Vol. 102, Issue 3 https://doi.org/10.1063/1.4776703	journal	January 2013
Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects Chaudhuri, Sandeep K.; Kleppinger, Joshua W.; Mandal, Krishna C. Journal of Applied Physics, Vol. 128, Issue 11 https://doi.org/10.1063/5.0021403	journal	September 2020
Silicon Carbide Microstrip Radiation Detectors Puglisi, Donatella; Bertuccio, Giuseppe Micromachines, Vol. 10, Issue 12 https://doi.org/10.3390/mi10120835	journal	November 2019
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors Rafi, Joan Marc; Pellegrini, Giulio; Godignon, Philippe IEEE Transactions on Nuclear Science, Vol. 67, Issue 12 https://doi.org/10.1109/TNS.2020.3029730	journal	December 2020
Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination Nguyen, Khai V.; Mannan, Mohammad A.; Mandal, Krishna C. IEEE Transactions on Nuclear Science, Vol. 62, Issue 6 https://doi.org/10.1109/TNS.2015.2496902	journal	December 2015
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons Nava, F.; Castaldini, A.; Cavallini, A. IEEE Transactions on Nuclear Science, Vol. 53, Issue 5 https://doi.org/10.1109/TNS.2006.882777	journal	October 2006
MCNPX benchmark for cosmic ray interactions with the Moon McKinney, G. W.; Lawrence, D. J.; Prettyman, T. H. Journal of Geophysical Research, Vol. 111, Issue E6 https://doi.org/10.1029/2005JE002551	journal	January 2006
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC Capan, Ivana; Brodar, Tomislav; Yamazaki, Yuichi Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 478 https://doi.org/10.1016/j.nimb.2020.07.005	journal	September 2020
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728 https://doi.org/10.1016/j.nima.2013.06.076	journal	November 2013
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C Neudeck, Philip G.; Spry, David J.; Chen, Liangyu IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2719280	journal	August 2017
Point defects in 4H–SiC epilayers introduced by neutron irradiation Hazdra, Pavel; Záhlava, Vít; Vobecký, Jan Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 327 https://doi.org/10.1016/j.nimb.2013.09.051	journal	May 2014
Elemental and Isotopic Composition of the Galactic Cosmic Rays Simpson, J. A. Annual Review of Nuclear and Particle Science, Vol. 33, Issue 1 https://doi.org/10.1146/annurev.ns.33.120183.001543	journal	December 1983
High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector Ruddy, F. H.; Seidel, J. G.; Sellin, P. 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) https://doi.org/10.1109/NSSMIC.2009.5402072	conference	October 2009
Electrical properties of the titanium acceptor in silicon carbide Dalibor, Thomas; Pensl, Gerhard; Nordell, Nils Physical Review B, Vol. 55, Issue 20 https://doi.org/10.1103/PhysRevB.55.13618	journal	May 1997
Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures Mohamed, N. S.; Wright, N. G.; Horsfall, A. B. IEEE Transactions on Nuclear Science, Vol. 64, Issue 7 https://doi.org/10.1109/TNS.2017.2705519	journal	July 2017
Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors Chaudhuri, Sandeep K.; Mandal, Krishna C. Advanced Materials for Radiation Detection https://doi.org/10.1007/978-3-030-76461-6_9	book	August 2021
Models and regressions to describe primary damage in silicon carbide Bonny, G.; Buongiorno, L.; Bakaev, A. Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-67070-x	journal	June 2020
The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased ¹⁰B-coated high-purity epitaxial GaAs thermal neutron detectors Gersch, H. K.; McGregor, D. S.; Simpson, P. A. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 489, Issue 1-3, p. 85-98 https://doi.org/10.1016/S0168-9002(02)00793-3	journal	August 2002
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications Meli, Alessandro; Muoio, Annamaria; Trotta, Antonio Materials, Vol. 14, Issue 4 https://doi.org/10.3390/ma14040976	journal	February 2021
Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk Applied Physics Letters, Vol. 119, Issue 6 https://doi.org/10.1063/5.0064036	journal	August 2021
Neutron production in the lunar subsurface from alpha particles in galactic cosmic rays Ota, Shuya; Kobayashi, Shingo; Sihver, Lembit Earth, Planets and Space, Vol. 63, Issue 1 https://doi.org/10.5047/eps.2010.01.006	journal	January 2011
A theory of ion beam induced charge collection Breese, M. B. H. Journal of Applied Physics, Vol. 74, Issue 6 https://doi.org/10.1063/1.354471	journal	September 1993
The fast neutron response of 4H silicon carbide semiconductor radiation detectors Ruddy, F. H.; Dulloo, A. R.; Seidel, J. G. IEEE Transactions on Nuclear Science, Vol. 53, Issue 3 https://doi.org/10.1109/TNS.2006.875151	journal	June 2006
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments Ruddy, Frank H.; Ottaviani, Laurent; Lyoussi, Abdallah EPJ Web of Conferences, Vol. 253 https://doi.org/10.1051/epjconf/202125311003	journal	January 2021
Spin and photophysics of carbon-antisite vacancy defect in 4 H silicon carbide: A potential quantum bit Szász, Krisztián; Ivády, Viktor; Abrikosov, Igor A. Physical Review B, Vol. 91, Issue 12 https://doi.org/10.1103/PhysRevB.91.121201	journal	March 2015
The global surface temperatures of the Moon as measured by the Diviner Lunar Radiometer Experiment Williams, J. -P.; Paige, D. A.; Greenhagen, B. T. Icarus, Vol. 283 https://doi.org/10.1016/j.icarus.2016.08.012	journal	February 2017
Conversion pathways of primary defects by annealing in proton-irradiated n -type 4 H -SiC Karsthof, Robert; Bathen, Marianne Etzelmüller; Galeckas, Augustinas Physical Review B, Vol. 102, Issue 18 https://doi.org/10.1103/PhysRevB.102.184111	journal	November 2020
Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors Mandal, Krishna C.; Chaudhuri, Sandeep K.; Nguyen, Khai V. IEEE Transactions on Nuclear Science, Vol. 61, Issue 4 https://doi.org/10.1109/TNS.2014.2335736	journal	August 2014
Demonstration of an SiC neutron detector for high-radiation environments Seshadri, S.; Dulloo, A. R.; Ruddy, F. H. IEEE Transactions on Electron Devices, Vol. 46, Issue 3 https://doi.org/10.1109/16.748878	journal	March 1999
Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN Gorine, Georgi; Pezzullo, Giuseppe; Mandic, Igor IEEE Transactions on Nuclear Science, Vol. 65, Issue 8 https://doi.org/10.1109/TNS.2018.2797540	journal	August 2018
Hard X-ray and γ -ray spectroscopy at high temperatures using a COTS SiC photodiode Bodie, C. S.; Lioliou, G.; Barnett, A. M. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985 https://doi.org/10.1016/j.nima.2020.164663	journal	January 2021
Defects as qubits in 3 C − and 4 H − SiC Gordon, L.; Janotti, A.; Van de Walle, C. G. Physical Review B, Vol. 92, Issue 4 https://doi.org/10.1103/PhysRevB.92.045208	journal	July 2015
High-resolution radiation detection using Ni/SiO ₂ /n-4H-SiC vertical metal-oxide-semiconductor capacitor Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W. Journal of Applied Physics, Vol. 130, Issue 7 https://doi.org/10.1063/5.0059151	journal	August 2021
First measurements of the radiation dose on the lunar surface Zhang, Shenyi; Wimmer-Schweingruber, Robert F.; Yu, Jia Science Advances, Vol. 6, Issue 39 https://doi.org/10.1126/sciadv.aaz1334	journal	September 2020
A semiconductor-based neutron detection system for planetary exploration Soto, Alejandro; Fronk, Ryan G.; Neal, Kerry Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 966 https://doi.org/10.1016/j.nima.2020.163852	journal	June 2020
High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors Ruddy, F. H.; Seidel, J. G.; Chen, Haoqian IEEE Transactions on Nuclear Science, Vol. 53, Issue 3, p. 1713-1718 https://doi.org/10.1109/TNS.2006.875155	journal	June 2006
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions Moscatelli, F.; Scorzoni, A.; Poggi, A. IEEE Transactions on Nuclear Science, Vol. 53, Issue 3 https://doi.org/10.1109/TNS.2006.872202	journal	June 2006
Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor Zhang, J.; Storasta, L.; Bergman, J. P. Journal of Applied Physics, Vol. 93, Issue 8 https://doi.org/10.1063/1.1543240	journal	April 2003
Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling Popelka, S.; Hazdra, P.; Sharma, R. IEEE Transactions on Nuclear Science, Vol. 61, Issue 6 https://doi.org/10.1109/TNS.2014.2358957	journal	December 2014
The Evolution of Silicon Wafer Cleaning Technology Kern, Werner Journal of The Electrochemical Society, Vol. 137, Issue 6 https://doi.org/10.1149/1.2086825	journal	January 1990
Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 437 https://doi.org/10.1016/j.nimb.2018.10.030	journal	December 2018

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