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Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250- μ m-Thick 4H-SiC Epitaxial Layers

Journal Article · · IEEE Transactions on Nuclear Science

Not provided.

Research Organization:
Univ. of South Carolina, Columbia, SC (United States)
Sponsoring Organization:
USDOE Office of Nuclear Energy (NE)
DOE Contract Number:
NE0008662
OSTI ID:
1980535
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 69, Issue 8; ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (44)

Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors journal August 2014
The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10B-coated high-purity epitaxial GaAs thermal neutron detectors
  • Gersch, H. K.; McGregor, D. S.; Simpson, P. A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 489, Issue 1-3, p. 85-98 https://doi.org/10.1016/S0168-9002(02)00793-3
journal August 2002
Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling journal December 2014
Radiation detection using fully depleted 50  μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects journal September 2020
High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector conference October 2009
A theory of ion beam induced charge collection journal September 1993
4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review journal February 2022
Demonstration of an SiC neutron detector for high-radiation environments journal March 1999
Point defects in 4H–SiC epilayers introduced by neutron irradiation journal May 2014
Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor journal April 2003
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors journal December 2020
The global surface temperatures of the Moon as measured by the Diviner Lunar Radiometer Experiment journal February 2017
A semiconductor-based neutron detection system for planetary exploration
  • Soto, Alejandro; Fronk, Ryan G.; Neal, Kerry
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 966 https://doi.org/10.1016/j.nima.2020.163852
journal June 2020
Elemental and Isotopic Composition of the Galactic Cosmic Rays journal December 1983
First measurements of the radiation dose on the lunar surface journal September 2020
The fast neutron response of 4H silicon carbide semiconductor radiation detectors journal June 2006
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons journal October 2006
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach journal January 2013
Hard X-ray and γ -ray spectroscopy at high temperatures using a COTS SiC photodiode
  • Bodie, C. S.; Lioliou, G.; Barnett, A. M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985 https://doi.org/10.1016/j.nima.2020.164663
journal January 2021
The Evolution of Silicon Wafer Cleaning Technology journal January 1990
Silicon Carbide Microstrip Radiation Detectors journal November 2019
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments journal January 2021
High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors journal June 2006
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250  μ m epitaxial layers journal June 2021
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C journal August 2017
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications journal February 2021
Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures journal July 2017
Models and regressions to describe primary damage in silicon carbide journal June 2020
Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors book August 2021
High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor journal August 2021
Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC
  • Brodar, Tomislav; Capan, Ivana; Radulović, Vladimir
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 437 https://doi.org/10.1016/j.nimb.2018.10.030
journal December 2018
Conversion pathways of primary defects by annealing in proton-irradiated n -type 4 H -SiC journal November 2020
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices journal February 2020
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions journal June 2006
Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors journal August 2021
Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC journal September 2020
Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study journal April 2018
Neutron production in the lunar subsurface from alpha particles in galactic cosmic rays journal January 2011
Electrical properties of the titanium acceptor in silicon carbide journal May 1997
Gamma-Ray Spectroscopy book January 2021
Spin and photophysics of carbon-antisite vacancy defect in 4 H silicon carbide: A potential quantum bit journal March 2015
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
  • Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728 https://doi.org/10.1016/j.nima.2013.06.076
journal November 2013
Defects as qubits in 3 C − and 4 H − SiC journal July 2015
Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination journal December 2015