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High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes

Journal Article · · IEEE Transactions on Electron Devices
 [1];  [1];  [1];  [2];  [2];  [1]
  1. Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, USA
  2. U.S. Naval Research Laboratory, Washington, DC, USA
+ Show Author Affiliations

Not provided.

Research Organization:
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AR0001008
OSTI ID:
1980482
Journal Information:
IEEE Transactions on Electron Devices, Vol. 69, Issue 4; ISSN 0018-9383
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (20)

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching journal December 2020
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors journal July 2000
Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes journal April 2001
Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors journal June 2020
Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors journal March 2002
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors journal June 2004
Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate journal August 2015
Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure journal August 2007
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs journal March 2001
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance journal May 2011
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation journal March 2011
Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode journal January 2020
Leakage mechanisms in GaN-on-GaN vertical pn diodes journal June 2018
Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates journal December 2011
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates journal April 2004
GaN Super-Heterojunction Schottky Barrier Diode with Over 10 kV Blocking Voltage conference April 2021
Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching conference September 2020
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors journal October 2013
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron conference September 2017
High Voltage Vertical GaN p-n Diodes With Avalanche Capability journal October 2013

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