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Demonstration and Analysis of Ultrahigh Forward Current Density Diamond Diodes

Journal Article · · IEEE Transactions on Electron Devices

Not provided.

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0021230
OSTI ID:
1980481
Journal Information:
IEEE Transactions on Electron Devices, Vol. 69, Issue 1; ISSN 0018-9383
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (25)

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Charge carrier trapping centers in synthetic diamond journal October 1997
Deep levels and trapping mechanisms in chemical vapor deposited diamond journal May 2002
Temperature dependent simulation of diamond depleted Schottky PIN diodes journal June 2016
Space‐Charge‐Limited Currents in Organic Crystals journal January 1962
J–V characteristics of GaN containing traps at several discrete energy levels journal March 2010
Spectroscopy of local states in molecular materials using space-charge-limited currents journal January 1990
Phosphorus-doped chemical vapor deposition of diamond journal April 2000
RF Characterization of Diamond Schottky p-i-n Diodes for Receiver Protector Applications journal December 2020
Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage journal August 2010
Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations journal March 2014
Dielectric relaxation and space charge limited transport in polycrystalline CVD diamond journal March 2005
Degradation of forward current density with increasing blocking voltage in diamond Schottky-pn diodes journal April 2020
Impurity-to-band activation energy in phosphorus doped diamond journal August 2013
Electrical contact considerations for diamond electron emission diodes journal January 2020
Trapping-detrapping defects in single crystal diamond films grown by chemical vapor deposition journal November 2005
Diamond power devices: state of the art, modelling, figures of merit and future perspective journal December 2019
Electronic states of phosphorus in diamond journal April 2000
Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime journal May 2000
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus journal March 1949
Carrier mobilities in silicon empirically related to doping and field journal January 1967
Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC journal November 2004
Electron-Hole Recombination in Germanium journal July 1952
Statistics of the Recombinations of Holes and Electrons journal September 1952

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