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110–140-GHz Wide-IF-Band 65-nm CMOS Receiver Design for Fusion Plasma Diagnostics

Journal Article · · IEEE Microwave and Wireless Components Letters
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  1. Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA, USA
+ Show Author Affiliations

Not provided.

Research Organization:
Univ. of California, Davis, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
FG02-99ER54531
OSTI ID:
1980443
Journal Information:
IEEE Microwave and Wireless Components Letters, Vol. 32, Issue 6; ISSN 1531-1309
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (15)

W-band system-on-chip electron cyclotron emission imaging system on DIII-D journal September 2020
Liquid crystal polymer receiver modules for electron cyclotron emission imaging on the DIII-D tokamak journal October 2018
Wide Bandwidth Millimeter-wave System-on-Chip Development and Applications conference November 2020
System-on-chip upgrade of millimeter-wave imaging diagnostics for fusion plasma journal May 2021
9.4 A 145GHz FMCW-Radar Transceiver in 28nm CMOS conference February 2019
A Wideband W-Band Receiver Front-End in 65-nm CMOS journal August 2008
A 2-Channel 136-156 GHz Dual Down-Conversion I/Q Receiver with 30 dB Gain and 9.5 dB NF Using CMOS 22nm FDSOI conference June 2021
Analysis of wide‐IF‐band 65 nm‐CMOS mixer for 77–110 GHz radio‐astronomical receiver design journal April 2019
New Trends in Microwave Imaging Diagnostics and Application to Burning Plasma journal May 2019
Millimeter-wave system-on-chip advancement for fusion plasma diagnostics journal October 2018
Millimeter-wave imaging diagnostics systems on the EAST tokamak (invited) journal August 2016
Millimeter-wave imaging of magnetic fusion plasmas: technology innovations advancing physics understanding journal March 2017
A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers conference August 2020
Quasi-3D electron cyclotron emission imaging on J-TEXT journal July 2017
A 110–125 GHz 27.5 dB Gain Low-power I/Q Receiver Front-end in 65 nm CMOS Technology conference June 2018

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