Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W.; Nag, Ritwik; Yang, Gene; Lee, Dongkyu; Mandal, Krishna C.

doi:10.1109/led.2022.3188543

Title: Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Journal Article · 01 September 2022 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2022.3188543· OSTI ID:1980441

^[1];

^[1]; Kleppinger, Joshua W. ^[1]; Nag, Ritwik ^[1]; Yang, Gene ^[2]; Lee, Dongkyu ^[2];

^[1]

Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
Department of Mechanical Engineering, University of South Carolina, Columbia, SC, USA

Not provided.

Cite

Export

Save

Research Organization:: Univ. of South Carolina, Columbia, SC (United States); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

DOE Contract Number:: NE0008662; AC07-05ID14517

OSTI ID:: 1980441

Journal Information:: IEEE Electron Device Letters, Vol. 43, Issue 9; ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (29)

A self-biased neutron detector based on an SiC semiconductor for a harsh environment Ha, Jang Ho; Kang, Sang Mook; Park, Se Hwan Applied Radiation and Isotopes, Vol. 67, Issue 7-8 https://doi.org/10.1016/j.apradiso.2009.02.013	journal	July 2009
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices Mandal, Krishna C.; Kleppinger, Joshua W.; Chaudhuri, Sandeep K. Micromachines, Vol. 11, Issue 3 https://doi.org/10.3390/mi11030254	journal	February 2020
High-resolution short range ion detectors based on 4H-SiC films Ivanov, A. M.; Kalinina, E. V.; Konstantinov, A. O. Technical Physics Letters, Vol. 30, Issue 7 https://doi.org/10.1134/1.1783406	journal	July 2004
Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors Karadavut, OmerFaruk; Chaudhuri, Sandeep K.; Kleppinger, Joshua W. Journal of Crystal Growth, Vol. 584 https://doi.org/10.1016/j.jcrysgro.2022.126566	journal	April 2022
Silicon Carbide Detectors for in vivo Dosimetry Bertuccio, Giuseppe; Puglisi, Donatella; Macera, Daniele IEEE Transactions on Nuclear Science, Vol. 61, Issue 2 https://doi.org/10.1109/TNS.2014.2307957	journal	April 2014
Hard X-ray and $γ$ -ray spectroscopy at high temperatures using a COTS SiC photodiode Bodie, C. S.; Lioliou, G.; Barnett, A. M. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985 https://doi.org/10.1016/j.nima.2020.164663	journal	January 2021
Silicon carbide detector for laser-generated plasma radiation Bertuccio, Giuseppe; Puglisi, Donatella; Torrisi, Lorenzo Applied Surface Science, Vol. 272 https://doi.org/10.1016/j.apsusc.2012.03.183	journal	May 2013
Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates Chiam, S. Y.; Chim, W. K.; Pi, C. Journal of Applied Physics, Vol. 103, Issue 8 https://doi.org/10.1063/1.2904928	journal	April 2008
Band Offset Enhancement of a-Al ₂ O ₃ /Tensile-Ge for High Mobility Nanoscale pMOS Devices Clavel, Michael B.; Hudait, Mantu K. IEEE Electron Device Letters, Vol. 38, Issue 9 https://doi.org/10.1109/LED.2017.2734040	journal	September 2017
Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate Choi, Gahyun; Yoon, Hoon Hahn; Jung, Sungchul Applied Physics Letters, Vol. 107, Issue 25 https://doi.org/10.1063/1.4938070	journal	December 2015
High-k dielectrics for 4H-silicon carbide: present status and future perspectives Siddiqui, Amna; Khosa, Rabia Yasmin; Usman, Muhammad Journal of Materials Chemistry C, Vol. 9, Issue 15 https://doi.org/10.1039/D0TC05008C	journal	January 2021
Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC Zhao, Feng; Amnuayphol, Oliver; Cheong, Kuan Yew Materials Letters, Vol. 245 https://doi.org/10.1016/j.matlet.2019.03.009	journal	June 2019
Electrical Properties of Pulsed Laser Deposited Y[sub 2]O[sub 3] Gate Oxide on 4H–SiC Quah, Hock Jin; Lim, Way Foong; Wimbush, Stuart C. Electrochemical and Solid-State Letters, Vol. 13, Issue 11 https://doi.org/10.1149/1.3481926	journal	January 2010
The Evolution of Silicon Wafer Cleaning Technology Kern, Werner Journal of The Electrochemical Society, Vol. 137, Issue 6 https://doi.org/10.1149/1.2086825	journal	January 1990
Charge transport mechanism of self-powered GaN p-i-n α-particle detector Geng, Xinlei; Xia, Xiaochuan; Liu, Jun Superlattices and Microstructures, Vol. 143 https://doi.org/10.1016/j.spmi.2020.106563	journal	July 2020
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments Ruddy, Frank H.; Ottaviani, Laurent; Lyoussi, Abdallah EPJ Web of Conferences, Vol. 253 https://doi.org/10.1051/epjconf/202125311003	journal	January 2021
Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk Journal of Crystal Growth, Vol. 583 https://doi.org/10.1016/j.jcrysgro.2022.126532	journal	April 2022
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C Neudeck, Philip G.; Spry, David J.; Chen, Liangyu IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2719280	journal	August 2017
A Total Internal Reflection Photoconductive Switch Bora, Mihail; Voss, Lars F.; Grivickas, Paulius V. IEEE Electron Device Letters, Vol. 40, Issue 5 https://doi.org/10.1109/LED.2019.2903926	journal	May 2019
High-resolution radiation detection using Ni/SiO ₂ /n-4H-SiC vertical metal-oxide-semiconductor capacitor Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W. Journal of Applied Physics, Vol. 130, Issue 7 https://doi.org/10.1063/5.0059151	journal	August 2021
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors Kasap, S. O.; Kabir, M. Z.; Ramaswami, Kieran O. Journal of Applied Physics, Vol. 128, Issue 12 https://doi.org/10.1063/5.0017521	journal	September 2020
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk Journal of Applied Physics, Vol. 129, Issue 24 https://doi.org/10.1063/5.0049218	journal	June 2021
Impacts of Al₂O₃/SiO₂ Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET Kil, Tae-Hyeon; Noguchi, Munetaka; Watanabe, Hiroshi IEEE Electron Device Letters, Vol. 43, Issue 1 https://doi.org/10.1109/LED.2021.3125945	journal	January 2022
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728 https://doi.org/10.1016/j.nima.2013.06.076	journal	November 2013
An Interactive Simulation Tool for Complex Multilayer Dielectric Devices Southwick, R. G.; Sup, A.; Jain, A. IEEE Transactions on Device and Materials Reliability, Vol. 11, Issue 2 https://doi.org/10.1109/TDMR.2011.2129593	journal	June 2011
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C. Applied Physics Letters, Vol. 102, Issue 3 https://doi.org/10.1063/1.4776703	journal	January 2013
A theory of ion beam induced charge collection Breese, M. B. H. Journal of Applied Physics, Vol. 74, Issue 6 https://doi.org/10.1063/1.354471	journal	September 1993
Compound semiconductor radiation detectors Owens, Alan; Peacock, A. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 531, Issue 1-2 https://doi.org/10.1016/j.nima.2004.05.071	journal	September 2004

Similar Records

Effect of Enhanced Hole Transport on the Performance of Ni/Y ₂ O ₃ /n-4H-SiC Epilayer Radiation Detectors

Journal Article · 2023 · IEEE Transactions on Nuclear Science · OSTI ID:1980441

Karadavut, Omerfaruk; Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; +1 more

Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z_1/2 and EH_6/7 deep defects

Journal Article · 2020 · Journal of Applied Physics · OSTI ID:1980441

Chaudhuri, Sandeep K.; Kleppinger, Joshua W.; Mandal, Krishna C.

High-resolution radiation detection using Ni/SiO ₂ /n-4H-SiC vertical metal-oxide-semiconductor capacitor

Journal Article · 2021 · Journal of Applied Physics · OSTI ID:1980441

Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W.; +1 more

Related Subjects

Engineering

Title: Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Citation Formats

References (29)

Similar Records

Related Subjects