Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Journal Article · · IEEE Electron Device Letters
 [1];  [2];  [2];  [2];  [3];  [3];  [2]
  1. Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA; OSTI
  2. Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
  3. Department of Mechanical Engineering, University of South Carolina, Columbia, SC, USA
+ Show Author Affiliations
Not provided.
Research Organization:
Univ. of South Carolina, Columbia, SC (United States); UT-Battelle LLC/ORNL, Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Nuclear Energy (NE)
DOE Contract Number:
NE0008662; AC07-05ID14517
OSTI ID:
1980441
Journal Information:
IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 9 Vol. 43; ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (29)

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250  μ m epitaxial layers journal June 2021
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices journal February 2020
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach journal January 2013
An Interactive Simulation Tool for Complex Multilayer Dielectric Devices journal June 2011
Silicon Carbide Detectors for in vivo Dosimetry journal April 2014
Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors journal April 2022
Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET journal January 2022
High-resolution short range ion detectors based on 4H-SiC films journal July 2004
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
  • Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 728 https://doi.org/10.1016/j.nima.2013.06.076
journal November 2013
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C journal August 2017
Charge transport mechanism of self-powered GaN p-i-n α-particle detector journal July 2020
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors journal September 2020
Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm journal April 2022
Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC journal June 2019
A Total Internal Reflection Photoconductive Switch journal May 2019
A theory of ion beam induced charge collection journal September 1993
Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments journal January 2021
Hard X-ray and γ -ray spectroscopy at high temperatures using a COTS SiC photodiode
  • Bodie, C. S.; Lioliou, G.; Barnett, A. M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 985 https://doi.org/10.1016/j.nima.2020.164663
journal January 2021
High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor journal August 2021
Compound semiconductor radiation detectors
  • Owens, Alan; Peacock, A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 531, Issue 1-2 https://doi.org/10.1016/j.nima.2004.05.071
journal September 2004
A self-biased neutron detector based on an SiC semiconductor for a harsh environment journal July 2009
Electrical Properties of Pulsed Laser Deposited Y[sub 2]O[sub 3] Gate Oxide on 4H–SiC journal January 2010
Silicon carbide detector for laser-generated plasma radiation journal May 2013
Band Offset Enhancement of a-Al 2 O 3 /Tensile-Ge for High Mobility Nanoscale pMOS Devices journal September 2017
Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate journal December 2015
Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates journal April 2008
High-k dielectrics for 4H-silicon carbide: present status and future perspectives journal January 2021
SRIM – The stopping and range of ions in matter (2010)
  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091
journal June 2010
The Evolution of Silicon Wafer Cleaning Technology journal January 1990

Similar Records

Effect of Enhanced Hole Transport on the Performance of Ni/Y 2 O 3 /n-4H-SiC Epilayer Radiation Detectors
Journal Article · 2023 · IEEE Transactions on Nuclear Science · OSTI ID:2418304
Self-Biased Mo/n-4H-SiC Schottky Barriers as High-Performance Ultraviolet Photodetectors
Journal Article · 2023 · IEEE Electron Device Letters · OSTI ID:2422437
Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects
Journal Article · 2020 · Journal of Applied Physics · OSTI ID:1801268

Related Subjects

Engineering