Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

Kemmerling, Jesse T.; Guan, Rian; Sadek, Mansura; Isukapati, Sundar; Sung, Woongje; Han, Sang-Woo; Chu, Rongming

doi:10.1109/led.2022.3163236

Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

Journal Article · 01 May 2022 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2022.3163236· OSTI ID:1980440

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Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USA

Not provided.

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0001478

OSTI ID:: 1980440

Journal Information:: IEEE Electron Device Letters, Vol. 43, Issue 5; ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (13)

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Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode Han, Sang-Woo; Song, Jianan; Chu, Rongming IEEE Transactions on Electron Devices, Vol. 67, Issue 1 https://doi.org/10.1109/TED.2019.2953843	journal	January 2020
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes Han, Sang-Woo; Song, Jianan; Sadek, Mansura IEEE Transactions on Electron Devices, Vol. 68, Issue 11 https://doi.org/10.1109/TED.2021.3111543	journal	November 2021
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching Han, Sang-Woo; Song, Jianan; Yoo, Sang Ha IEEE Electron Device Letters, Vol. 41, Issue 12 https://doi.org/10.1109/LED.2020.3029619	journal	December 2020
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure Xu, Ru; Chen, Peng; Liu, Menghan IEEE Electron Device Letters, Vol. 42, Issue 2 https://doi.org/10.1109/LED.2020.3049086	journal	February 2021
Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer Zhang, Tao; Lv, Yueguang; Li, Ruohan IEEE Electron Device Letters, Vol. 42, Issue 4 https://doi.org/10.1109/LED.2021.3057917	journal	April 2021
High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm ⁻² Zhang, Tao; Zhang, Jincheng; Zhou, Hong Applied Physics Express, Vol. 12, Issue 4 https://doi.org/10.7567/1882-0786/ab0712	journal	March 2019
Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si ₃ N ₄ Compatible Self-Terminated, Low Damage Anode Recess Technology Gao, Jingnan; Jin, Yufeng; Xie, Bing IEEE Electron Device Letters, Vol. 39, Issue 6 https://doi.org/10.1109/LED.2018.2830998	journal	June 2018
High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability Zhou, Feng; Xu, Weizong; Ren, Fangfang 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.23919/ISPSD50666.2021.9452308	conference	May 2021
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs Vetury, R.; Zhang, N. Q.; Keller, S. IEEE Transactions on Electron Devices, Vol. 48, Issue 3 https://doi.org/10.1109/16.906451	journal	March 2001
Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure Saito, W.; Nitta, T.; Kakiuchi, Y. IEEE Transactions on Electron Devices, Vol. 54, Issue 8 https://doi.org/10.1109/TED.2007.901150	journal	August 2007
Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs Huang, Huolin; Liang, Yung C.; Samudra, Ganesh S. IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2288644	journal	May 2014
High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates Xing, H.; Dora, Y.; Chini, A. IEEE Electron Device Letters, Vol. 25, Issue 4 https://doi.org/10.1109/LED.2004.824845	journal	April 2004

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