An Optimal Design for 1.2kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well

Kim, Dongyoung; Jang, Seung Yup; DeBoer, Skylar; Morgan, Adam J.; Sung, Woongje

doi:10.1109/led.2022.3162156

An Optimal Design for 1.2kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well

Journal Article · 01 May 2022 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2022.3162156· OSTI ID:1980439

^[1]; ^[1]; DeBoer, Skylar ^[1]; ^[1]; ^[1]

College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USA

Not provided.

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008710

OSTI ID:: 1980439

Journal Information:: IEEE Electron Device Letters, Vol. 43, Issue 5; ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (15)

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Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices Mochizuki, Kazuhiro; Kosugi, Ryoji; Yonezawa, Yoshiyuki Japanese Journal of Applied Physics, Vol. 58, Issue 5 https://doi.org/10.7567/1347-4065/ab08ae	journal	April 2019
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation Kim, Dongyoung; Sung, Woongje IEEE Electron Device Letters, Vol. 42, Issue 12 https://doi.org/10.1109/LED.2021.3123289	journal	December 2021
Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier Elahipanah, Hossein; Thierry-Jebali, Nicolas; Reshanov, Sergey A. Materials Science Forum, Vol. 897 https://doi.org/10.4028/www.scientific.net/MSF.897.455	journal	May 2017
Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances Mancini, Stephen A.; Jang, Seung Yup; Kim, Dongyoung 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA49284.2021.9645152	conference	November 2021
First Demonstration of Short-Circuit Capability for a 1.2 kV SiC SWITCH-MOS Okawa, Masataka; Aiba, Ruito; Kanamori, Taiga IEEE Journal of the Electron Devices Society, Vol. 7 https://doi.org/10.1109/JEDS.2019.2917563	journal	January 2019
Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal Aiba, Ruito; Matsui, Kevin; Baba, Masakazu IEEE Electron Device Letters, Vol. 41, Issue 12 https://doi.org/10.1109/LED.2020.3031598	journal	December 2020
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) Sung, Woongje; Baliga, B. J. IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10 https://doi.org/10.1109/TIE.2017.2696515	journal	October 2017
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS) Kusumoto, Osamu; Ohoka, Atsushi; Horikawa, Nobuyuki Microelectronics Reliability, Vol. 58 https://doi.org/10.1016/j.microrel.2015.11.033	journal	March 2016
Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications Yun, Nick; Lynch, Justin; Sung, Woongje IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, Issue 1 https://doi.org/10.1109/JESTPE.2019.2947284	journal	March 2020
New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs Han, Kijeong; Kanale, Ajit; Baliga, B. J. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA.2018.8569178	conference	October 2018
Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS Kobayashi, Yusuke; Ohse, Naoyuki; Morimoto, Tadao 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268356	conference	December 2017
Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier Yen, Cheng-Tyng; Hsu, Fu-Jen; Hung, Chien-Chung 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ISPSD.2018.8393601	conference	May 2018
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density Palanisamy, S.; Basler, T.; Lutz, J. 2021 IEEE International Reliability Physics Symposium (IRPS) https://doi.org/10.1109/IRPS46558.2021.9405183	conference	March 2021
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs Agarwal, Anant; Fatima, Husna; Haney, Sarah IEEE Electron Device Letters, Vol. 28, Issue 7 https://doi.org/10.1109/LED.2007.897861	journal	July 2007

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