Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

Kim, Dongyoung; Sung, Woongje

doi:10.1109/led.2021.3123289

Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

Journal Article · 01 December 2021 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2021.3123289· OSTI ID:1980438

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Not provided.

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008710

OSTI ID:: 1980438

Journal Information:: IEEE Electron Device Letters, Vol. 42, Issue 12; ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (12)

Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation Hallén, Anders; Linnarsson, Margareta K.; Vines, Lasse Materials Science Forum, Vol. 963 https://doi.org/10.4028/www.scientific.net/MSF.963.375	journal	July 2019
Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices Mochizuki, Kazuhiro; Kosugi, Ryoji; Yonezawa, Yoshiyuki Japanese Journal of Applied Physics, Vol. 58, Issue 5 https://doi.org/10.7567/1347-4065/ab08ae	journal	April 2019
Simulation Study of Al Channeling in 4H-SiC Hobler, Gerhard; Nordlund, Kai; Current, Michael 2018 22nd International Conference on Ion Implantation Technology (IIT) https://doi.org/10.1109/IIT.2018.8807927	conference	September 2018
Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs Cooper, James A.; Morisette, Dallas T.; Sampath, Madankumar IEEE Transactions on Electron Devices, Vol. 68, Issue 9 https://doi.org/10.1109/TED.2021.3099455	journal	September 2021
High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique Sun, Jiahui; Yang, Shu; Xu, Hongyi IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, Issue 1 https://doi.org/10.1109/JESTPE.2019.2941518	journal	March 2020
Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET Hatta, Hideyuki; Tominaga, Takaaki; Hino, Shiro Materials Science Forum, Vol. 924 https://doi.org/10.4028/www.scientific.net/MSF.924.727	journal	June 2018
Design and fabrication of 3.3kV SiC MOSFETs for industrial applications Huang, Xing; Fursin, Leonid; Bhalla, Anup 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) https://doi.org/10.23919/ISPSD.2017.7988908	conference	May 2017
Particularities of the Short-Circuit Operation and Failure Modes of SiC-MOSFETs Unger, Christian; Pfost, Martin IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 9, Issue 5 https://doi.org/10.1109/JESTPE.2021.3053127	journal	October 2021
Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness Bolotnikov, Alexander; Losee, Peter A.; Ghandi, Reza Materials Science Forum, Vol. 963 https://doi.org/10.4028/www.scientific.net/MSF.963.801	journal	July 2019
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension Sung, Woongje; Baliga, B. J. IEEE Electron Device Letters, Vol. 37, Issue 12 https://doi.org/10.1109/LED.2016.2623423	journal	December 2016
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide Chung, G. Y.; Tin, C. C.; Williams, J. R. IEEE Electron Device Letters, Vol. 22, Issue 4 https://doi.org/10.1109/55.915604	journal	April 2001
Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals Wong-Leung, J.; Janson, M. S.; Svensson, B. G. Journal of Applied Physics, Vol. 93, Issue 11 https://doi.org/10.1063/1.1569972	journal	June 2003

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