Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon

Fitch, Christopher R.; Baltusis, Aidas; Marko, Igor P.; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Sweeney, Stephen J.

doi:10.1109/jstqe.2021.3101293

Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon

Journal Article · 01 January 2022 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/jstqe.2021.3101293· OSTI ID:1980432

^[1]; ^[1]; ^[1]; Jung, Daehwan ^[2]; Norman, Justin C. ^[3]; ^[2]; ^[1]

Advanced Technology Institute, University of Surrey, Guildford, Surrey, U.K.
Institute for Energy Efficiency, University of California, Santa Barbara, CA, USA
Materials Department, University of California, Santa Barbara, CA, USA

Not provided.

Research Organization:: Hewlett Packard Enterprise, Houston, TX (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0001039

OSTI ID:: 1980432

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 28, Issue 1: Semiconductor Lasers; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics Society

Country of Publication:: United States

Language:: English

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