Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

Buffolo, Matteo; Lain, Federico; Zenari, M.; Santi, Carlo De; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1109/jstqe.2021.3091960

Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

Journal Article · 01 January 2022 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/jstqe.2021.3091960· OSTI ID:1980431

^[1]; Lain, Federico ^[1]; Zenari, M. ^[1]; ^[1]; ^[2]; ^[3]; Herrick, Robert W. ^[4]; ^[1]; ^[1]; ^[1]

Department of Information Engineering, University of Padova, Padova, Italy
Quintessent Inc., Santa Barbara, CA, USA
Department of Electrical and Computer Engineering, University of California, (UCSB), Santa Barbara, CA, USA
Intel Corporation, Santa Clara, CA, USA

Not provided.

Research Organization:: Hewlett Packard Enterprise, Houston, TX (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0001039

OSTI ID:: 1980431

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 28, Issue 1: Semiconductor Lasers; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics Society

Country of Publication:: United States

Language:: English

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