Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

Wong, Matthew S.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1109/jqe.2022.3166650

Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices

Journal Article · 01 August 2022 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/jqe.2022.3166650· OSTI ID:1980420

^[1]; Speck, James S. ^[1]; ^[2]; ^[2]

Materials Department, University of California at Santa Barbara, Santa Barbara, CA, USA
Materials Department and the Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA

Not provided.

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0009691

OSTI ID:: 1980420

Journal Information:: IEEE Journal of Quantum Electronics, Vol. 58, Issue 4; ISSN 0018-9197

Publisher:: IEEE

Country of Publication:: United States

Language:: English

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Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C. Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5096773	journal	November 2019
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih Applied Physics Letters, Vol. 112, Issue 7 https://doi.org/10.1063/1.5017045	journal	February 2018
Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies Zollner, Christian J.; DenBaars, S. P.; Speck, J. S. Semiconductor Science and Technology, Vol. 36, Issue 12 https://doi.org/10.1088/1361-6641/ac27e7	journal	October 2021
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi Japanese Journal of Applied Physics, Vol. 52, Issue 8S https://doi.org/10.7567/JJAP.52.08JK12	journal	August 2013
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency Takano, Takayoshi; Mino, Takuya; Sakai, Jun Applied Physics Express, Vol. 10, Issue 3 https://doi.org/10.7567/APEX.10.031002	journal	February 2017
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R. Applied Physics Express, Vol. 6, Issue 3 https://doi.org/10.7567/APEX.6.032101	journal	March 2013
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p‐type conduction in Mg‐doped Ga_0.91In_0.09N grown by metalorganic vapor‐phase epitaxy Yamasaki, S.; Asami, S.; Shibata, N. Applied Physics Letters, Vol. 66, Issue 9 https://doi.org/10.1063/1.113829	journal	February 1995
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