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Improving CdSeTe Devices With a Back Buffer Layer of Cu x AlO y

Journal Article · · IEEE Journal of Photovoltaics

Not provided.

Research Organization:
Colorado State Univ., Fort Collins, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0008974
OSTI ID:
1980412
Journal Information:
IEEE Journal of Photovoltaics, Vol. 12, Issue 1; ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (26)

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Oxidation as Key Mechanism for Efficient Interface Passivation in Cu ( In , Ga ) Se 2 Thin-Film Solar Cells journal May 2020
Interfaces Between CdTe and ALD Al 2 O 3 journal November 2018
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 journal July 2006
Investigation of Sputtered Oxides and p + Back-contact for Polycrystalline CdTe and CdSeTe Photovoltaics
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Back-Surface Passivation of CdTe Solar Cells Using Solution-Processed Oxidized Aluminum journal November 2020
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Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures journal December 2019
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Open-circuit Voltage Exceeding 840 mV for All-Sputtered CdS/CdTe Devices conference June 2020
Understanding the role of selenium in defect passivation for highly efficient selenium-alloyed cadmium telluride solar cells journal May 2019
Efficiency Potential of Photovoltaic Materials and Devices Unveiled by Detailed-Balance Analysis journal April 2017