The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Kim, Dongyoung; Yun, Nick; Morgan, Adam J.; Sung, Woongje

doi:10.1109/jeds.2022.3218689

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Journal Article · 01 January 2022 · IEEE Journal of the Electron Devices Society

DOI:https://doi.org/10.1109/jeds.2022.3218689· OSTI ID:1980396

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College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USA

Not provided.

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008710

OSTI ID:: 1980396

Journal Information:: IEEE Journal of the Electron Devices Society, Vol. 10; ISSN 2168-6734

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (12)

Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness No authors listed 2020 IEEE International Reliability Physics Symposium (IRPS) https://doi.org/10.1109/IRPS45951.2020.9128324		April 2020
Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications No authors listed IEEE Journal of Emerging and Selected Topics in Power Electronics https://doi.org/10.1109/JESTPE.2019.2947284		March 2020
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation No authors listed IEEE Electron Device Letters https://doi.org/10.1109/LED.2021.3123289		December 2021
Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature No authors listed 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ISPSD.2018.8393684		May 2018
4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET No authors listed Materials Science Forum https://doi.org/10.4028/www.scientific.net/MSF.527-529.1281		October 2006
A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel No authors listed 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) https://doi.org/10.23919/ISPSD.2017.7988996		May 2017
Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs No authors listed MRS Proceedings https://doi.org/10.1557/PROC-1069-D07-18		January 2008
Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM) No authors listed 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) https://doi.org/10.1109/WiPDA.2017.8170553		October 2017
A 1-kV 4H-SiC Power DMOSFET Optimized for Low on-Resistance No authors listed IEEE Transactions on Electron Devices https://doi.org/10.1109/TED.2007.904577		October 2007
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide No authors listed IEEE Electron Device Letters https://doi.org/10.1109/55.915604		April 2001
Fundamentals of Power Semiconductor Devices No authors listed https://doi.org/10.1007/978-0-387-47314-7		January 2008
An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs No authors listed IEEE Journal of the Electron Devices Society https://doi.org/10.1109/JEDS.2021.3109605		January 2021

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