Low-temperature processed beta-phase In2Se3 ferroelectric semiconductor thin film transistors

Lee, Sora; Zhang, Xiaotian; McKnight, Thomas; Ramkorun, Bhavesh; Wang, Huaiyu; Gopalan, Venkatraman; Redwing, Joan M.; Jackson, Thomas N.

doi:10.1088/2053-1583/ac5b17

Low-temperature processed beta-phase In₂Se₃ ferroelectric semiconductor thin film transistors

Journal Article · 23 March 2022 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ac5b17· OSTI ID:1979457

; Zhang, Xiaotian; McKnight, Thomas; ; Wang, Huaiyu; Gopalan, Venkatraman; ; Jackson, Thomas N.

As scaling becomes increasingly difficult, there is growing interest in vertical or three-dimensional stacking of transistors and especially memory. Ferroelectric semiconductor field effect transistors can be key enablers to improve energy efficiency and overall chip and memory performance. In this work, low-temperature processed, back-end-of-the-line compatible transistors were demonstrated by depositing a layered chalcogenide ferroelectric semiconductor, beta-phase In₂Se₃, at temperature as low as 400 °C. Top gate n-channel In₂Se₃thin film transistors were fabricated with field-effect mobility ~1 cm²V^-1s^-1, and simple polarization switching based memory results are presented.

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0020145; SC0021118

OSTI ID:: 1979457

Journal Information:: 2D Materials, Vol. 9, Issue 2; ISSN 2053-1583

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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