Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length

Liu, Yang; Liu, Song; Wang, Zhiying; Li, Baichang; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong; Hone, James

doi:10.1038/s41928-022-00808-9

Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length

Journal Article · 01 September 2022 · Nature Electronics

DOI:https://doi.org/10.1038/s41928-022-00808-9· OSTI ID:1978722

; Liu, Song; Wang, Zhiying; ; ; ; ;

Not provided.

Research Organization:: Columbia Univ., New York, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0016703

OSTI ID:: 1978722

Journal Information:: Nature Electronics, Vol. 5, Issue 9; ISSN 2520-1131

Publisher:: Springer Nature

Country of Publication:: United States

Language:: English

References (36)

Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
2D transition metal dichalcogenides Manzeli, Sajedeh; Ovchinnikov, Dmitry; Pasquier, Diego Nature Reviews Materials, Vol. 2, Issue 8 https://doi.org/10.1038/natrevmats.2017.33	journal	June 2017
Two-dimensional semiconductors for transistors Chhowalla, Manish; Jena, Debdeep; Zhang, Hua Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.52	journal	August 2016
Promises and prospects of two-dimensional transistors Liu, Yuan; Duan, Xidong; Shin, Hyeon-Jin Nature, Vol. 591, Issue 7848 https://doi.org/10.1038/s41586-021-03339-z	journal	March 2021
Disorder in van der Waals heterostructures of 2D materials Rhodes, Daniel; Chae, Sang Hoon; Ribeiro-Palau, Rebeca Nature Materials, Vol. 18, Issue 6 https://doi.org/10.1038/s41563-019-0366-8	journal	May 2019
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Mixed-dimensional van der Waals heterostructures Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C. Nature Materials, Vol. 16, Issue 2 https://doi.org/10.1038/nmat4703	journal	August 2016
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016
Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control Edelberg, Drew; Rhodes, Daniel; Kerelsky, Alexander Nano Letters, Vol. 19, Issue 7 https://doi.org/10.1021/acs.nanolett.9b00985	journal	June 2019
Odd- and even-denominator fractional quantum Hall states in monolayer WSe2 Shi, Qianhui; Shih, En-Min; Gustafsson, Martin V. Nature Nanotechnology, Vol. 15, Issue 7 https://doi.org/10.1038/s41565-020-0685-6	journal	July 2020
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Boron nitride substrates for high-quality graphene electronics Dean, C. R.; Young, A. F.; Meric, I. Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726 https://doi.org/10.1038/nnano.2010.172	journal	August 2010
Low-Temperature Ohmic Contact to Monolayer MoS ₂ by van der Waals Bonded Co/ h -BN Electrodes Cui, Xu; Shih, En-Min; Jauregui, Luis A. Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b01536	journal	July 2017
Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes Liu, Yuan; Wu, Hao; Cheng, Hung-Chieh Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/nl504957p	journal	April 2015
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Liu, Yuan; Guo, Jian; Zhu, Enbo Nature, Vol. 557, Issue 7707 https://doi.org/10.1038/s41586-018-0129-8	journal	May 2018
Transferred via contacts as a platform for ideal two-dimensional transistors Jung, Younghun; Choi, Min Sup; Nipane, Ankur Nature Electronics, Vol. 2, Issue 5 https://doi.org/10.1038/s41928-019-0245-y	journal	May 2019
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors Wang, Yan; Kim, Jong Chan; Wu, Ryan J. Nature, Vol. 568, Issue 7750 https://doi.org/10.1038/s41586-019-1052-3	journal	March 2019
Ultralow contact resistance between semimetal and monolayer semiconductors Shen, Pin-Chun; Su, Cong; Lin, Yuxuan Nature, Vol. 593, Issue 7858 https://doi.org/10.1038/s41586-021-03472-9	journal	May 2021
Via Method for Lithography Free Contact and Preservation of 2D Materials Telford, Evan J.; Benyamini, Avishai; Rhodes, Daniel Nano Letters, Vol. 18, Issue 2 https://doi.org/10.1021/acs.nanolett.7b05161	journal	January 2018
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Frictional Characteristics of Atomically Thin Sheets Lee, C.; Li, Q.; Kalb, W. Science, Vol. 328, Issue 5974, p. 76-80 https://doi.org/10.1126/science.1184167	journal	April 2010
A review on Raman finger prints of doping and strain effect in TMDCs Iqbal, Muhammad Waqas; Shahzad, Kinza; Akbar, Rehan Microelectronic Engineering, Vol. 219 https://doi.org/10.1016/j.mee.2019.111152	journal	January 2020
Semiconductor Material and Device Characterization Schroder, Dieter K. John Wiley & Sons, Inc. https://doi.org/10.1002/0471749095	book	January 2005
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
Electron and Hole Mobilities in Single-Layer WSe ₂ Allain, Adrien; Kis, Andras ACS Nano, Vol. 8, Issue 7 https://doi.org/10.1021/nn5021538	journal	June 2014
Hole mobility enhancement and p -doping in monolayer WSe ₂ by gold decoration Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang 2D Materials, Vol. 1, Issue 3 https://doi.org/10.1088/2053-1583/1/3/034001	journal	October 2014
Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation Wu, Zhangting; Luo, Zhongzhong; Shen, Yuting Nano Research, Vol. 9, Issue 12 https://doi.org/10.1007/s12274-016-1232-5	journal	September 2016
Obtaining the specific contact resistance from transmission line model measurements Reeves, G. K.; Harrison, H. B. IEEE Electron Device Letters, Vol. 3, Issue 5 https://doi.org/10.1109/EDL.1982.25502	journal	May 1982
Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET Ni, C. -N.; Li, X.; Sharma, S. 2015 Symposium on VLSI Technology (VLSI Technology) https://doi.org/10.1109/VLSIT.2015.7223711	conference	June 2015
A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs Lu, Wenjie; Guo, Alex; Vardi, Alon IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2295328	journal	February 2014
Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals Guo, Yao; Han, Yuxiang; Li, Jiapeng ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn503152r	journal	July 2014
Analytical measurements of contact resistivity in two-dimensional WSe₂ field-effect transistors Moon, Inyong; Choi, Min Sup; Lee, Sungwon 2D Materials, Vol. 8, Issue 4 https://doi.org/10.1088/2053-1583/ac1adb	journal	August 2021
Carbon nanotube digital electronics Peng, Lian-Mao; Zhang, Zhiyong; Qiu, Chenguang Nature Electronics, Vol. 2, Issue 11 https://doi.org/10.1038/s41928-019-0330-2	journal	November 2019
Three-dimensional integration of plasmonics and nanoelectronics Liu, Yang; Zhang, Jiasen; Peng, Lian-Mao Nature Electronics, Vol. 1, Issue 12 https://doi.org/10.1038/s41928-018-0176-z	journal	December 2018
A library of atomically thin metal chalcogenides Zhou, Jiadong; Lin, Junhao; Huang, Xiangwei Nature, Vol. 556, Issue 7701 https://doi.org/10.1038/s41586-018-0008-3	journal	April 2018

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