Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al 2 O 3 with a Series of Al(CH 3 ) x Cl 3–x and Al(C y H 2y+1 ) 3 Precursors

Oh, Il-Kwon; Sandoval, Tania E.; Liu, Tzu-Ling; Richey, Nathaniel E.; Nguyen, Chi Thang; Gu, Bonwook; Lee, Han-Bo-Ram; Tonner-Zech, Ralf; Bent, Stacey F.

doi:10.1021/jacs.2c03752

Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al ₂ O ₃ with a Series of Al(CH ₃ ) _x Cl _3–x and Al(C _y H _2y+1 ) ₃ Precursors

Journal Article · 07 June 2022 · Journal of the American Chemical Society

DOI:https://doi.org/10.1021/jacs.2c03752· OSTI ID:1978486

^[1]; ^[2]; ^[3]; ^[4]; ^[5]; Gu, Bonwook ^[5]; ^[5]; ^[6]; ^[4]

Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States; Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea
Chemical and Environmental Engineering Department, Universidad Técnica Federico Santa María, Santiago 8940000, Chile
Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea
Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstraße 2, Leipzig 04103, Germany

Not provided.

Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0004782

OSTI ID:: 1978486

Journal Information:: Journal of the American Chemical Society, Vol. 144, Issue 26; ISSN 0002-7863

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

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Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al 2 O 3 with a Series of Al(CH 3 ) x Cl 3–x and Al(C y H 2y+1 ) 3 Precursors

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Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al ₂ O ₃ with a Series of Al(CH ₃ ) _x Cl _3–x and Al(C _y H _2y+1 ) ₃ Precursors