Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Tip-Mediated Bandgap Tuning for Monolayer Transition Metal Dichalcogenides

Journal Article · · ACS Nano
 [1];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [5];  [8];  [9];  [10];  [4];  [3]
  1. Department of Physics, National Central University, Taoyuan 32001, Taiwan
  2. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
  3. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
  4. Department of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States; Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
  5. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan; Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 106, Taiwan
  6. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
  7. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Center for Emergent Functional Matter Science (CEFMS), National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
  8. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan; Center for Emergent Functional Matter Science (CEFMS), National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
  9. Graduate School of Human and Environmental Studies, Kyoto University, Kyoto 606-8501, Japan
  10. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 304-0044, Japan

Not provided.

Research Organization:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
FG02-07ER46383
OSTI ID:
1978396
Journal Information:
ACS Nano, Vol. 16, Issue 9; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

References (32)

High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects journal January 2013
Structural, optical and electrostatic properties of single and few-layers MoS 2 : effect of substrate journal February 2015
Influence of the Substrate on the Optical and Photo-electrochemical Properties of Monolayer MoS 2 journal March 2020
Pressure-induced superconductivity up to 13.1 K in the pyrite phase of palladium diselenide PdS e 2 journal August 2017
Superconductivity in Pristine 2 H a − MoS 2 at Ultrahigh Pressure journal January 2018
Electrical control of neutral and charged excitons in a monolayer semiconductor journal February 2013
Tightly bound trions in monolayer MoS2 journal December 2012
Electrical control of optical properties of monolayer MoS2 journal February 2013
Bandgap tunability at single-layer molybdenum disulphide grain boundaries journal February 2015
Point Defects and Grain Boundaries in Rotationally Commensurate MoS 2 on Epitaxial Graphene journal March 2016
Moiré superlattices and 2D electronic properties of graphite/MoS2 heterostructures journal May 2019
Angle dependence of the local electronic properties of the graphene/MoS2interface determined byab initiocalculations journal March 2017
Direct Imaging of Band Profile in Single Layer MoS 2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending journal April 2014
STM study of the MoS2 flakes grown on graphite: A model system for atomically clean 2D heterostructure interfaces journal August 2016
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor journal August 2014
Tunable band gaps in bilayer transition-metal dichalcogenides journal November 2011
Transport characteristics of a silicene nanoribbon on Ag(110) journal August 2017
Thickness dependent electronic properties of Pt dichalcogenides journal January 2019
Tunneling through a controllable vacuum gap journal January 1982
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors journal August 1994
Tunneling mechanisms in electrochemical STM —distance and voltage tunneling spectroscopy journal July 1995
Stark effect inAu(111)andCu(111)surface states journal July 2004
Surface-State Stark Shift in a Scanning Tunneling Microscope journal November 2003
Graphite edge controlled registration of monolayer MoS 2 crystal orientation journal May 2015
Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy journal June 2017
Imaging and identification of point defects in PtTe2 journal January 2021
Electron states of mono- and bilayer graphene on SiC probed by scanning-tunneling microscopy journal July 2007
Raman spectroscopy of epitaxial graphene on a SiC substrate journal March 2008
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2 journal September 2015
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Generalized Gradient Approximation Made Simple journal October 1996