Hydrogen Behavior at Crystalline/Amorphous Interface of Transparent Oxide Semiconductor and Its Effects on Carrier Transport and Crystallization

Medvedeva, Julia E.; Sharma, Kapil; Bhattarai, Bishal; Bertoni, Mariana I.

doi:10.1021/acsami.2c09604

Hydrogen Behavior at Crystalline/Amorphous Interface of Transparent Oxide Semiconductor and Its Effects on Carrier Transport and Crystallization

Journal Article · 19 August 2022 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.2c09604· OSTI ID:1978279

^[1]; Sharma, Kapil ^[1]; ^[1]; ^[2]

Department of Physics, Missouri University of Science & Technology, Rolla, Missouri 65409, United States
Ira A. Fulton School of Engineering, Arizona State University, Tempe, Arizona 85281, United States

Not provided.

Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0009346

OSTI ID:: 1978279

Journal Information:: ACS Applied Materials and Interfaces, Vol. 14, Issue 34; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

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