Tunable Mott Dirac and Kagome Bands Engineered on 1 T -TaS 2

Lee, Dongheon; Jin, Kyung-Hwan; Liu, Feng; Yeom, Han Woong

doi:10.1021/acs.nanolett.2c02866

Tunable Mott Dirac and Kagome Bands Engineered on 1 T -TaS ₂

Journal Article · 26 September 2022 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.2c02866· OSTI ID:1978204

Lee, Dongheon ^[1]; ^[2]; ^[3]; ^[4]

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea; OSTI
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea; Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

Not provided.

Research Organization:: Univ. of Utah, Salt Lake City, UT (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: FG02-04ER46148

OSTI ID:: 1978204

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 19 Vol. 22; ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

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