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Creating Functional Oxynitride–Silicon Interfaces and SrNbO 2 N Thin Films for Photoelectrochemical Applications

Journal Article · · Journal of Physical Chemistry. C
 [1];  [1];  [1];  [2];  [3];  [1];  [4];  [1];  [5];  [3]
  1. Department of Chemistry & Chemical Biology, Rutgers, 123 Bevier Road, Piscataway, New Jersey 08854, United States
  2. Department of Physics & Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
  3. Department of Chemistry & Chemical Biology, Rutgers, 123 Bevier Road, Piscataway, New Jersey 08854, United States; Waksman Institute, Rutgers University, 190 Freilinghuysen Road, Piscataway, New Jersey 08854, United States
  4. Department of Materials Science & Engineering, Rutgers University, Piscataway, 607 Taylor Road, Piscataway, New Jersey 08854, United States
  5. Department of Chemistry & Chemical Biology, Rutgers, 123 Bevier Road, Piscataway, New Jersey 08854, United States; Department of Physics & Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States

Not provided.

Research Organization:
Rutgers Univ., Piscataway, NJ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0008083
OSTI ID:
1978030
Journal Information:
Journal of Physical Chemistry. C, Vol. 126, Issue 13; ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

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