Pulsed-Mode MOCVD Growth of ZnSn(Ga)N 2 and Determination of the Valence Band Offset with GaN

Zhang, Kaitian; Hu, Chenxi; Bhuiyan, A. F.  M.  Anhar Uddin; Zhu, Menglin; Vangipuram, Vijay Gopal Thirupakuzi; Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Hwang, Jinwoo; Kash, Kathleen; Zhao, Hongping

doi:10.1021/acs.cgd.2c00511

Pulsed-Mode MOCVD Growth of ZnSn(Ga)N ₂ and Determination of the Valence Band Offset with GaN

Journal Article · 08 July 2022 · Crystal Growth and Design

DOI:https://doi.org/10.1021/acs.cgd.2c00511· OSTI ID:1977779

Zhang, Kaitian ^[1]; Hu, Chenxi ^[2]; Bhuiyan, A. F. M. Anhar Uddin ^[1]; Zhu, Menglin ^[3]; Vangipuram, Vijay Gopal Thirupakuzi ^[1]; ^[1]; Jayatunga, Benthara Hewage Dinushi ^[2]; Hwang, Jinwoo ^[3]; ^[2]; ^[4]

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States; Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States

Not provided.

Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008718

OSTI ID:: 1977779

Journal Information:: Crystal Growth and Design, Vol. 22, Issue 8; ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

References (19)

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