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Morphology and Growth Habit of the New Flux-Grown Layered Semiconductor KBiS 2 Revealed by Diffraction Contrast Tomography

Journal Article · · Crystal Growth and Design
 [1];  [2];  [3];  [3];  [4];  [5];  [3]
  1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
  2. Carl Zeiss X-ray Microscopy Inc., Pleasanton, California 94588, United States
  3. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
  4. Beckman Institute, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
  5. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States; National Center for Supercomputing Applications, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
+ Show Author Affiliations

Not provided.

Research Organization:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0013897
OSTI ID:
1977777
Journal Information:
Crystal Growth and Design, Vol. 22, Issue 5; ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

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