Band Structure Engineering Based on InGaN/ZnGeN 2 Heterostructure Quantum Wells for Visible Light Emitters

Karim, Md Rezaul; Dinushi Jayatunga, Benthara Hewage; Zhang, Kaitian; Zhu, Menglin; Hwang, Jinwoo; Kash, Kathleen; Zhao, Hongping

doi:10.1021/acs.cgd.1c00630

Band Structure Engineering Based on InGaN/ZnGeN ₂ Heterostructure Quantum Wells for Visible Light Emitters

Journal Article · 22 November 2021 · Crystal Growth and Design

DOI:https://doi.org/10.1021/acs.cgd.1c00630· OSTI ID:1977771

^[1]; Dinushi Jayatunga, Benthara Hewage ^[2]; Zhang, Kaitian ^[1]; Zhu, Menglin ^[3]; Hwang, Jinwoo ^[3]; ^[2]; ^[4]

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States; Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States

Not provided.

Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008718

OSTI ID:: 1977771

Journal Information:: Crystal Growth and Design, Vol. 22, Issue 1; ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

References (25)

6-1: Invited Paper : Status and Future Prospects for Visible-Spectrum Light-Emitting Diodes Krames, Michael R. SID Symposium Digest of Technical Papers, Vol. 47, Issue 1 https://doi.org/10.1002/sdtp.10594	journal	May 2016
Yellow–red emission from (Ga,In)N heterostructures Damilano, B.; Gil, B. Journal of Physics D: Applied Physics, Vol. 48, Issue 40 https://doi.org/10.1088/0022-3727/48/40/403001	journal	September 2015
Efficiency Drop in Green InGaN / GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele Physical Review Letters, Vol. 116, Issue 2 https://doi.org/10.1103/PhysRevLett.116.027401	journal	January 2016
Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers Li, Hongjian; Zhang, Haojun; Song, Jie Applied Physics Reviews, Vol. 7, Issue 4 https://doi.org/10.1063/5.0024236	journal	December 2020
Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson Applied Physics Letters, Vol. 91, Issue 9 https://doi.org/10.1063/1.2775334	journal	August 2007
High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes Park, Seoung-Hwan; Ahn, Doyeol; Kim, Jong-Wook Applied Physics Letters, Vol. 94, Issue 4 https://doi.org/10.1063/1.3075853	journal	January 2009
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes Zhao, Hongping; Arif, Ronald A.; Ee, Yik-Khoon IEEE Journal of Quantum Electronics, Vol. 45, Issue 1 https://doi.org/10.1109/jqe.2008.2004000	journal	January 2009
Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm Zhao, Hongping; Arif, Ronald A.; Ee, Yik-Khoon Optical and Quantum Electronics, Vol. 40, Issue 5-6 https://doi.org/10.1007/s11082-007-9177-2	journal	January 2008
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Zhao, Hongping; Liu, Guangyu; Tansu, Nelson Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3493188	journal	September 2010
Type-II InGaN-GaNAs quantum wells for lasers applications Arif, Ronald A.; Zhao, Hongping; Tansu, Nelson Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2829600	journal	January 2008
Optical properties of type-II InGaN/GaAsN/GaN quantum wells Park, Seoung-Hwan; Lee, Yong-Tak; Park, Jongwoon Optical and Quantum Electronics, Vol. 41, Issue 11-13 https://doi.org/10.1007/s11082-010-9391-1	journal	November 2009
Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells Han, Lu; Kash, Kathleen; Zhao, Hongping Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962280	journal	September 2016
Design of InGaN-ZnSnN ₂ quantum wells for high-efficiency amber light emitting diodes Karim, Md Rezaul; Zhao, Hongping Journal of Applied Physics, Vol. 124, Issue 3 https://doi.org/10.1063/1.5036949	journal	July 2018
Type-II AlInN/ZnGeN ₂ quantum wells for ultraviolet laser diodes Fu, Hanlin; Goodrich, Justin C.; Ogidi-Ekoko, Onoriode Journal of Applied Physics, Vol. 126, Issue 13 https://doi.org/10.1063/1.5120302	journal	October 2019
Characterization and control of ZnGeN2 cation lattice ordering Blanton, Eric W.; He, Keliang; Shan, Jie Journal of Crystal Growth, Vol. 461 https://doi.org/10.1016/j.jcrysgro.2017.01.008	journal	March 2017
Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN ₂ Zhu, L. D.; Maruska, P. H.; Norris, P. E. MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue S1 https://doi.org/10.1557/S1092578300002374	journal	January 1999
Heteroepitaxial Integration of ZnGeN ₂ on GaN Buffers Using Molecular Beam Epitaxy Tellekamp, M. Brooks; Melamed, Celeste L.; Norman, Andrew G. Crystal Growth & Design, Vol. 20, Issue 3 https://doi.org/10.1021/acs.cgd.9b01578	journal	February 2020
Experimental determination of the valence band offsets of ZnGeN ₂ and (ZnGe) _0.94 Ga _0.12 N ₂ with GaN Karim, Md Rezaul; Noesges, Brenton A.; Jayatunga, Benthara Hewage Dinushi Journal of Physics D: Applied Physics, Vol. 54, Issue 24 https://doi.org/10.1088/1361-6463/abee45	journal	March 2021
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN ₂ films grown on GaN by metalorganic chemical vapor deposition Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Zhu, Menglin AIP Advances, Vol. 10, Issue 6 https://doi.org/10.1063/1.5137767	journal	June 2020
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN ₂ Films on Sapphire Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Feng, Zixuan Crystal Growth & Design, Vol. 19, Issue 8 https://doi.org/10.1021/acs.cgd.9b00560	journal	July 2019
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering Vickers, M. E.; Kappers, M. J.; Smeeton, T. M. Journal of Applied Physics, Vol. 94, Issue 3 https://doi.org/10.1063/1.1587251	journal	August 2003
Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes Nakamura, Shuji Journal of Crystal Growth, Vol. 145, Issue 1-4 https://doi.org/10.1016/0022-0248(94)91163-0	journal	December 1994
Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure Eliseev, Petr G.; Smagley, Vladimir A.; Perlin, Piotr Photonics West '96, SPIE Proceedings https://doi.org/10.1117/12.238944	conference	May 1996
Luminescence properties of defects in GaN Reshchikov, Michael A.; Morkoç, Hadis Journal of Applied Physics, Vol. 97, Issue 6 https://doi.org/10.1063/1.1868059	journal	March 2005
Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2 Quantum Wells Light-Emitting Diodes Grgat, Jonathon; Han, Lu; Zhao, Hongping CLEO: Science and Innovations, Conference on Lasers and Electro-Optics https://doi.org/10.1364/CLEO_SI.2017.STh3I.5	conference	January 2017

Similar Records

Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes

Journal Article · 2023 · Journal of Vacuum Science and Technology A · OSTI ID:1968136

Zhang, Kaitian; Hu, Chenxi; Thirupakuzi Vangipuram, Vijay Gopal; +2 more

Experimental determination of the valence band offsets of ZnGeN₂ and (ZnGe)_0.94Ga_0.12N₂ with GaN

Journal Article · 2021 · Journal of Physics. D, Applied Physics · OSTI ID:1848865

Karim, Md Rezaul; Noesges, Brenton A.; Jayatunga, Benthara Hewage Dinushi; +6 more

Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Journal Article · 2007 · Semiconductors · OSTI ID:21088455

Tarkhin, D V; Rebane, Yu T; Gorbunov, R I; +3 more

Related Subjects

Chemistry
Crystallography
Materials Science

Band Structure Engineering Based on InGaN/ZnGeN 2 Heterostructure Quantum Wells for Visible Light Emitters

Citation Formats

References (25)

Similar Records

Related Subjects

Band Structure Engineering Based on InGaN/ZnGeN ₂ Heterostructure Quantum Wells for Visible Light Emitters