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Title: Tritiated amorphous silicon for micropower applications

Abstract

The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.

Authors:
 [1]; ;  [2];  [3]
  1. Ontario Hydro Technologies, Toronto, Ontario (Canada)|[Univ. of Toronto, Ontario (Canada)
  2. Univ. of Toronto, Ontario (Canada)
  3. Ontario Hydro Technologies, Toronto, Ontario (Canada)
Publication Date:
OSTI Identifier:
196834
Report Number(s):
CONF-950506-
Journal ID: FUSTE8; ISSN 0748-1896; TRN: 96:001398-177
Resource Type:
Journal Article
Journal Name:
Fusion Technology
Additional Journal Information:
Journal Volume: 28; Journal Issue: 3 pt 2; Conference: 5. topical meeting on tritium technology in fission, fusion and isotopic applications, Ispra (Italy), 28 May - 3 Jun 1995; Other Information: PBD: Oct 1995
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION; 25 ENERGY STORAGE; 07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; TRITIUM; USES; BETAVOLTAIC CELLS; QUANTUM EFFICIENCY; SILICON; AMORPHOUS STATE; SEMICONDUCTOR MATERIALS; PHOTOLUMINESCENCE; RADIOLUMINESCENCE; CARBON; NUCLEAR POWER; INFRARED RADIATION; GLOW DISCHARGES; TEMPERATURE DEPENDENCE; CONTAMINATION; ENERGY CONVERSION; SCRUBBING

Citation Formats

Kherani, N.P., Kosteski, T., Zukotynski, S., and Shmayda, W.T. Tritiated amorphous silicon for micropower applications. United States: N. p., 1995. Web.
Kherani, N.P., Kosteski, T., Zukotynski, S., & Shmayda, W.T. Tritiated amorphous silicon for micropower applications. United States.
Kherani, N.P., Kosteski, T., Zukotynski, S., and Shmayda, W.T. Sun . "Tritiated amorphous silicon for micropower applications". United States.
@article{osti_196834,
title = {Tritiated amorphous silicon for micropower applications},
author = {Kherani, N.P. and Kosteski, T. and Zukotynski, S. and Shmayda, W.T.},
abstractNote = {The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.},
doi = {},
journal = {Fusion Technology},
number = 3 pt 2,
volume = 28,
place = {United States},
year = {1995},
month = {10}
}