Tritiated amorphous silicon for micropower applications

Journal Article · Sun Oct 01 00:00:00 EDT 1995 · Fusion Technology

OSTI ID:196834

Kherani, N P ^[1]; Kosteski, T; Zukotynski, S ^[2]; Shmayda, W T ^[1]

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1. Ontario Hydro Technologies, Toronto, Ontario (Canada)
2. Univ. of Toronto, Ontario (Canada)

The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.

• OSTI ID: 196834
• Report Number(s): CONF-950506-; ISSN 0748-1896; TRN: 96:001398-177
• Journal Information: Fusion Technology, Vol. 28, Issue 3 pt 2; Conference: 5. topical meeting on tritium technology in fission, fusion and isotopic applications, Ispra (Italy), 28 May - 3 Jun 1995; Other Information: PBD: Oct 1995
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION
25 ENERGY STORAGE
07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY
TRITIUM
USES
BETAVOLTAIC CELLS
QUANTUM EFFICIENCY
SILICON
AMORPHOUS STATE
SEMICONDUCTOR MATERIALS
PHOTOLUMINESCENCE
RADIOLUMINESCENCE
CARBON
NUCLEAR POWER
INFRARED RADIATION
GLOW DISCHARGES
TEMPERATURE DEPENDENCE
CONTAMINATION
ENERGY CONVERSION
SCRUBBING