A study of the timing properties of Cd{sub 0.9}Zn{sub 0.1}Te
CdZnTe has become a material of great interest in the field of X- and {gamma}-ray imaging, and shows great promise as a highly efficient, room-temperature operation detector. However, data on the timing resolution obtainable with this material is scarce. It is known that CdZnTe, in common with all compound semi-conductors, gives pulses of varying rise-time depending on the interaction location, hence causing a broadening of the time spectrum. We therefore assembled and characterized an appropriate electronic measuring set-up and took data with 2 different sets of detectors, varying the experimental parameters such as bias voltage, threshold and temperature during the course of the experiment. The results obtained with planar detectors of 9 mm{sup 2} {times} 2 mm thick were superior to the results obtained with detectors of 25 mm{sup 2} {times} 10 mm thick, even when the difference in effective bias field strength is considered. Timing resolutions of 5.3 ns and 20.9 ns (FWHM) respectively were obtained. Reducing the temperature to 0{degree}C reduced the resolution to 4.5 ns, thereby indicating that the performance is limited by signal-to-noise ratio considerations.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 195778
- Report Number(s):
- BNL-62301; CONF-951073-11; ON: DE96004164; CRN: C/BNL--94-12
- Resource Relation:
- Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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