Plasma-based edge terminations for gallium nitride power devices

Zhao, Yuji; Fu, Houqiang; Fu, Kai

Plasma-based edge terminations for gallium nitride power devices

Patent · 16 August 2022

OSTI ID:1925002

Zhao, Yuji; Fu, Houqiang; Fu, Kai

A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

View Patent

Research Organization:: Arizona State Univ., Scottsdale, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0000868

Assignee:: Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)

Patent Number(s):: 11,417,529

Application Number:: 17/072,622

OSTI ID:: 1925002

Country of Publication:: United States

Language:: English

References (64)

Over 1.0 kV GaN p -n junction diodes on free-standing GaN substrates Nomoto, Kazuki; Hatakeyama, Yoshitomo; Katayose, Hideo physica status solidi (a), Vol. 208, Issue 7 https://doi.org/10.1002/pssa.201000976	journal	May 2011
High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes Gupta, Chirag; Enatsu, Yuuki; Gupta, Geetak physica status solidi (a), Vol. 213, Issue 4 https://doi.org/10.1002/pssa.201532554	journal	January 2016
Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics Sun, Haiding; Li, Xiaohang physica status solidi (a) https://doi.org/10.1002/pssa.201800420	journal	October 2018
Fundamentals of Power Semiconductor Devices Baliga, B. Jayant https://doi.org/10.1007/978-0-387-47314-7	book	January 2008
High-breakdown-voltage pn-junction diodes on GaN substrates Yoshizumi, Yusuke; Hashimoto, Shin; Tanabe, Tatsuya Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.246	journal	January 2007
Full-duplex light communication with a monolithic multicomponent system Wang, Yongjin; Wang, Xin; Zhu, Bingcheng Light: Science & Applications, Vol. 7, Issue 1 https://doi.org/10.1038/s41377-018-0083-0	journal	October 2018
High performance GaN pin rectifiers grown on free-standing GaN substrates Limb, J. B.; Yoo, D.; Ryou, J. -H. Electronics Letters, Vol. 42, Issue 22 https://doi.org/10.1049/el:20062261	journal	January 2006
Growth and characterization of GaN PiN rectifiers on free-standing GaN Cao, X. A.; Lu, H.; LeBoeuf, S. F. Applied Physics Letters, Vol. 87, Issue 5 https://doi.org/10.1063/1.2001738	journal	August 2005
Time-resolved cathodoluminescence of Mg-doped GaN Fischer, A. M.; Srinivasan, S.; Ponce, F. A. Applied Physics Letters, Vol. 93, Issue 15 https://doi.org/10.1063/1.3000383	journal	October 2008
Hydrogen-related, deeply bound excitons in Mg-doped GaN films Juday, R.; Fischer, A. M.; Huang, Y. Applied Physics Letters, Vol. 103, Issue 8 https://doi.org/10.1063/1.4819029	journal	August 2013
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Qi, Meng; Nomoto, Kazuki; Zhu, Mingda Applied Physics Letters, Vol. 107, Issue 23 https://doi.org/10.1063/1.4936891	journal	December 2015
Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications Fu, Houqiang; Lu, Zhijian; Huang, Xuanqi Journal of Applied Physics, Vol. 119, Issue 17 https://doi.org/10.1063/1.4948667	journal	May 2016
Normally-off p -GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment Hao, Ronghui; Fu, Kai; Yu, Guohao Applied Physics Letters, Vol. 109, Issue 15 https://doi.org/10.1063/1.4964518	journal	October 2016
Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well Fu, Houqiang; Chen, Hong; Huang, Xuanqi Journal of Applied Physics, Vol. 121, Issue 1 https://doi.org/10.1063/1.4972975	journal	January 2017
Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency Huang, Xuanqi; Fu, Houqiang; Chen, Hong Applied Physics Letters, Vol. 110, Issue 16 https://doi.org/10.1063/1.4980139	journal	April 2017
Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations Chen, Hong; Huang, Xuanqi; Fu, Houqiang Applied Physics Letters, Vol. 110, Issue 18 https://doi.org/10.1063/1.4983026	journal	May 2017
Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers Fu, Houqiang; Huang, Xuanqi; Chen, Hong Applied Physics Letters, Vol. 111, Issue 15 https://doi.org/10.1063/1.4993201	journal	October 2017
Dopant profiling in p-i-n GaN structures using secondary electrons Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai Journal of Applied Physics, Vol. 126, Issue 1 https://doi.org/10.1063/1.5096273	journal	July 2019
Gallium nitride vertical power devices on foreign substrates: a review and outlook Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás Journal of Physics D: Applied Physics, Vol. 51, Issue 27 https://doi.org/10.1088/1361-6463/aac8aa	journal	June 2018
Yellow luminescence and related deep levels in unintentionally doped GaN films Shalish, I.; Kronik, L.; Segal, G. Physical Review B, Vol. 59, Issue 15 https://doi.org/10.1103/PhysRevB.59.9748	journal	April 1999
Evidence for Two Mg Related Acceptors in GaN Monemar, B.; Paskov, P. P.; Pozina, G. Physical Review Letters, Vol. 102, Issue 23 https://doi.org/10.1103/PhysRevLett.102.235501	journal	June 2009
SiC device edge termination using finite area argon implantation Alok, D.; Baliga, B. J. IEEE Transactions on Electron Devices, Vol. 44, Issue 6 https://doi.org/10.1109/16.585559	journal	June 1997
Very-high power density AlGaN/GaN HEMTs Wu, Yi-Feng; Kapolnek, D. J.; Ibbetson, J. P. IEEE Transactions on Electron Devices, Vol. 48, Issue 3, p. 586-590 https://doi.org/10.1109/16.906455	journal	March 2001
GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 Nomoto, Kazuki; Hu, Z.; Song, B. 2015 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2015.7409665	conference	December 2015
Design space and origin of off-state leakage in GaN vertical power diodes Zhang, Y.; Wong, H. -Y.; Sun, M. 2015 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2015.7409830	conference	December 2015
1200 V GaN vertical fin power field-effect transistors Zhang, Y.; Sun, M.; Piedra, D. 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268357	conference	December 2017
Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Fu, Houqiang; Lu, Zhijian; Zhao, Xin-Hao Journal of Display Technology, Vol. 12, Issue 7 https://doi.org/10.1109/JDT.2016.2521618	journal	July 2016
High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension Ghandi, R.; Buono, B.; Domeij, M. IEEE Electron Device Letters, Vol. 30, Issue 11 https://doi.org/10.1109/LED.2009.2030374	journal	November 2009
Planar Nearly Ideal Edge-Termination Technique for GaN Devices Ozbek, A. Merve; Baliga, B. Jayant IEEE Electron Device Letters, Vol. 32, Issue 3 https://doi.org/10.1109/LED.2010.2095825	journal	March 2011
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension Sung, Woongje; Van Brunt, Edward; Baliga, B. J. IEEE Electron Device Letters, Vol. 32, Issue 7 https://doi.org/10.1109/LED.2011.2144561	journal	July 2011
3.7 kV Vertical GaN PN Diodes Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2294175	journal	February 2014
Suppression of Current Leakage Along Mesa Surfaces in GaN-Based p-i-n Diodes Zheng, Bo-Sheng; Chen, Po-Yu; Yu, Chia-Jui IEEE Electron Device Letters, Vol. 36, Issue 9 https://doi.org/10.1109/LED.2015.2458899	journal	September 2015
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV Ohta, Hiroshi; Kaneda, Naoki; Horikiri, Fumimasa IEEE Electron Device Letters, Vol. 36, Issue 11 https://doi.org/10.1109/LED.2015.2478907	journal	November 2015
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET Gupta, Chirag; Chan, Silvia H.; Enatsu, Yuuki IEEE Electron Device Letters, Vol. 37, Issue 12 https://doi.org/10.1109/LED.2016.2616508	journal	December 2016
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes Zhang, Yuhao; Piedra, Daniel; Sun, Min IEEE Electron Device Letters, Vol. 38, Issue 2 https://doi.org/10.1109/LED.2016.2646669	journal	February 2017
Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes Fu, Houqiang; Huang, Xuanqi; Chen, Hong IEEE Electron Device Letters, Vol. 38, Issue 6 https://doi.org/10.1109/LED.2017.2690974	journal	June 2017
1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy Hu, Zongyang; Nomoto, Kazuki; Qi, Meng IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2720747	journal	August 2017
Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi IEEE Electron Device Letters, Vol. 38, Issue 9 https://doi.org/10.1109/LED.2017.2723603	journal	September 2017
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs Hao, Ronghui; Li, Weiyi; Fu, Kai IEEE Electron Device Letters, Vol. 38, Issue 11 https://doi.org/10.1109/LED.2017.2749678	journal	November 2017
Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J. IEEE Electron Device Letters, Vol. 38, Issue 12 https://doi.org/10.1109/LED.2017.2765340	journal	December 2017
15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain Salemi, Arash; Elahipanah, Hossein; Jacobs, Keijo IEEE Electron Device Letters, Vol. 39, Issue 1 https://doi.org/10.1109/LED.2017.2774139	journal	January 2018
GaN-on-Si Quasi-Vertical Power MOSFETs Liu, Chao; Abdul Khadar, Riyaz; Matioli, Elison IEEE Electron Device Letters, Vol. 39, Issue 1 https://doi.org/10.1109/LED.2017.2779445	journal	January 2018
820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2 Abdul Khadar, Riyaz; Liu, Chao; Zhang, Liyang IEEE Electron Device Letters, Vol. 39, Issue 3 https://doi.org/10.1109/LED.2018.2793669	journal	March 2018
High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination Han, Shaowen; Yang, Shu; Sheng, Kuang IEEE Electron Device Letters, Vol. 39, Issue 4 https://doi.org/10.1109/LED.2018.2808684	journal	April 2018
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ji, Dong; Gupta, Chirag; Agarwal, Anchal IEEE Electron Device Letters, Vol. 39, Issue 5 https://doi.org/10.1109/LED.2018.2813312	journal	May 2018
880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ji, Dong; Agarwal, Anchal; Li, Haoran IEEE Electron Device Letters, Vol. 39, Issue 6 https://doi.org/10.1109/LED.2018.2828844	journal	June 2018
High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination Fu, Houqiang; Fu, Kai; Huang, Xuanqi IEEE Electron Device Letters, Vol. 39, Issue 7 https://doi.org/10.1109/LED.2018.2837625	journal	July 2018
Vertical Ga ₂ O ₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation Lin, Chia-Hung; Yuda, Yohei; Wong, Man Hoi IEEE Electron Device Letters, Vol. 40, Issue 9 https://doi.org/10.1109/LED.2019.2927790	journal	September 2019
Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices Bolotnikov, Alexander V.; Muzykov, Peter G.; Zhang, Qingchun IEEE Transactions on Electron Devices, Vol. 57, Issue 8 https://doi.org/10.1109/TED.2010.2051246	journal	August 2010
High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain Ghandi, Reza; Buono, Benedetto; Domeij, Martin IEEE Transactions on Electron Devices, Vol. 58, Issue 8 https://doi.org/10.1109/TED.2011.2154332	journal	August 2011
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure Chowdhury, Srabanti; Mishra, Umesh K. IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2277893	journal	October 2013
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Design of 1.2 kV Power Switches With Low $R_{\mathrm{{\scriptscriptstyle ON}}}$ Using GaN-Based Vertical JFET No authors listed IEEE Transactions on Electron Devices, Vol. 62, Issue 8 https://doi.org/10.1109/TED.2015.2446954	journal	August 2015
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT Hao, Ronghui; Xu, Ning; Yu, Guohao IEEE Transactions on Electron Devices, Vol. 65, Issue 4 https://doi.org/10.1109/TED.2018.2803521	journal	April 2018
Silicon Carbide Power Devices Baliga, B. Jayant https://doi.org/10.1142/5986	book	January 2006
Hole Compensation Mechanism of P-Type GaN Films Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 5A https://doi.org/10.1143/JJAP.31.1258	journal	May 1992
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.31.L139	journal	February 1992
First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN Okamoto, Yasuharu; Saito, Mineo; Oshiyama, Atsushi Japanese Journal of Applied Physics, Vol. 35, Issue Part 2, No. 7A https://doi.org/10.1143/JJAP.35.L807	journal	July 1996
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Zhao, Yuji; Fu, Houqiang; Wang, George T. Advances in Optics and Photonics, Vol. 10, Issue 1 https://doi.org/10.1364/AOP.10.000246	journal	January 2018
Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing Fu, Houqiang; Fu, Kai; Liu, Hanxiao Applied Physics Express, Vol. 12, Issue 5 https://doi.org/10.7567/1882-0786/ab1813	journal	May 2019
Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates Fu, Houqiang; Zhang, Xiaodong; Fu, Kai Applied Physics Express, Vol. 11, Issue 11 https://doi.org/10.7567/APEX.11.111003	journal	October 2018
High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process Hatakeyama, Yoshitomo; Nomoto, Kazuki; Terano, Akihisa Japanese Journal of Applied Physics, Vol. 52, Issue 2R https://doi.org/10.7567/JJAP.52.028007	journal	February 2013

Similar Records

Low-leakage regrown GaN p-n junctions for GaN power devices

Patent · 2023 · OSTI ID:1998290

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Journal Article · 2018 · IEEE Electron Device Letters · OSTI ID:1505564

Semiconductor laser device

Patent · 1981 · OSTI ID:5878956

Plasma-based edge terminations for gallium nitride power devices

Citation Formats

References (64)

Similar Records

Related Subjects