Molecular dynamics studies of the ion beam induced crystallization in silicon

Conference · Mon Jan 23 00:00:00 EST 1995

OSTI ID:192448

Marques, L A; Caturla, M J; Huang, H ^[1]

---

1. and others

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 192448
• Report Number(s): UCRL-JC-122973; CONF-951155-44; ON: DE96005391; TRN: 96:006486
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 23 Jan 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
CRYSTAL GROWTH
CRYSTALLIZATION
CRYSTAL DEFECTS
AMORPHOUS STATE
GRAIN SIZE