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A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

Conference ·
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It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Advanced Manufacturing Office (EE-5A)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1922194
Report Number(s):
NREL/CP-5K00-85140; MainId:85913; UUID:4e2e25d1-0451-4959-a037-5d4840b2c939; MainAdminID:68564
Country of Publication:
United States
Language:
English

References (9)

Defects in 4H-SiC epilayers affecting device yield and reliability conference March 2022
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs journal July 2007
Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer journal May 2017
Aluminum Implantation in 4H-SiC: Physical and Electrical Properties journal January 2013
Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress journal July 2013
Basal plane dislocation-free epitaxy of silicon carbide journal October 2005
Body Diode Reliability of Commercial SiC Power MOSFETs conference October 2019
Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET journal June 2018
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias journal July 2002

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Related Subjects

4H-SiC
ENGINEERING
MOSFET
basal plane dislocation (BPD)
body diode degradation
ion implantation